Control of the nonlinear response of bulk GaAs induced by long-wavelength infrared pulses

D. Matteo, J. Pigeon, S. Y.A. Tochitsky, U. Huttner, M. Kira, S. W. Koch, J. V. Moloney, C. Joshi

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The nonlinear optical response of GaAs is studied using extremely nonresonant 10 µm laser pulses with peak intensities greater than 2 GW/cm2. We observe over an order of magnitude enhancement in the four-wave mixing efficiency by decreasing the CO2 laser beat-wave frequency. This enhancement is attributed to currents of photoexcited unbound carriers modulated at the beat frequency, confirmed by measurements of nonlinear absorption at this long wavelength as well as a fully microscopic analysis of the excitation dynamics. Modeling of such nonperturbative semiconductor-laser interactions predicts that further decreasing the beat frequency can increase the nonlinear response and allow for its control over two orders of magnitude.

Original languageEnglish (US)
Pages (from-to)30462-30472
Number of pages11
JournalOptics Express
Volume27
Issue number21
DOIs
StatePublished - Oct 14 2019

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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