Controllable Formation of the Crystalline Phases in Ge–Ga–S Chalcogenide Glass-Ceramics

Xinyu Yang, Mingjie Zhang, Kunlun Yan, Liyuan Han, Qin Xu, Haitao Liu, Rongping Wang, P. Lucas

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We prepared chemically stoichiometric, S-poor and S-rich Ge–Ga–S glasses and annealed them at a temperature that was 20°C higher than its respective glass transition temperature. We aimed at tuning the formation of the different crystals in chalcogenide glass-ceramics. Through systematic characterization of the structure using X-ray diffraction and Raman scattering spectra, we found that, GeS2 and GeS crystals only can be created in S-rich and S-poor glass-ceramics, respectively, while all GeS, Ga2S3, and GeS2 crystals exist in chemically stoichiometric glass-ceramics. Moreover, we demonstrated the homogeneous distribution of the crystals can be formed in the S-rich glass-ceramics from the surface to the interior via composition designing. The present approach blazes a new path to control the growth of the different crystals in chalcogenide glass-ceramics.

Original languageEnglish (US)
Pages (from-to)74-80
Number of pages7
JournalJournal of the American Ceramic Society
Volume100
Issue number1
DOIs
StatePublished - Jan 1 2017

Keywords

  • chalcogenides
  • crystals/crystallization
  • glass-ceramics
  • Raman spectroscopy
  • X-ray methods

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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