Correlation of optical luminescence with radiation hardness in doped LiNbO 3 crystals

William J. Thomes, Kelly Potter, Barrett G Potter, Louis S. Weichman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Transient ionizing radiation fields have been observed to cause substantial optical loss in undoped LiNbO 3 crystals operating at 1.06 microns. This loss is slow to recover and makes the selection of this material for Q-switch applications in radiation environments unfeasible. We have studied the effects of Mg doping on the radiation response of LiNbO 3 crystals and have investigated the optical luminescence of doped and undoped samples. Our results indicate a strong correlation between crystal defects, formed primarily during crystal growth, and the radiation-induced optical loss exhibited by these materials. These findings have enabled us to produce radiation-hard LiNbO 3 crystals for use in high gamma-field environments.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsM. Chipara, D.L. Edwards, R.S. Benson, S. Phillips
Number of pages6
Publication statusPublished - 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 3 2004


Other2004 MRS Fall Meeting
CountryUnited States
CityBoston, MA


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Thomes, W. J., Potter, K., Potter, B. G., & Weichman, L. S. (2005). Correlation of optical luminescence with radiation hardness in doped LiNbO 3 crystals. In M. Chipara, D. L. Edwards, R. S. Benson, & S. Phillips (Eds.), Materials Research Society Symposium Proceedings (Vol. 851, pp. 301-306). [NN7.3]