Correlation of optical luminescence with radiation hardness in doped LiNbO 3 crystals

William J. Thomes, Kelly Potter, Barrett G Potter, Louis S. Weichman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Transient ionizing radiation fields have been observed to cause substantial optical loss in undoped LiNbO 3 crystals operating at 1.06 microns. This loss is slow to recover and makes the selection of this material for Q-switch applications in radiation environments unfeasible. We have studied the effects of Mg doping on the radiation response of LiNbO 3 crystals and have investigated the optical luminescence of doped and undoped samples. Our results indicate a strong correlation between crystal defects, formed primarily during crystal growth, and the radiation-induced optical loss exhibited by these materials. These findings have enabled us to produce radiation-hard LiNbO 3 crystals for use in high gamma-field environments.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsM. Chipara, D.L. Edwards, R.S. Benson, S. Phillips
Pages301-306
Number of pages6
Volume851
StatePublished - 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 3 2004

Other

Other2004 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/29/0412/3/04

Fingerprint

Luminescence
Hardness
Radiation
Optical losses
Crystals
Crystal defects
Ionizing radiation
Crystallization
Crystal growth
Switches
Doping (additives)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Thomes, W. J., Potter, K., Potter, B. G., & Weichman, L. S. (2005). Correlation of optical luminescence with radiation hardness in doped LiNbO 3 crystals. In M. Chipara, D. L. Edwards, R. S. Benson, & S. Phillips (Eds.), Materials Research Society Symposium Proceedings (Vol. 851, pp. 301-306). [NN7.3]

Correlation of optical luminescence with radiation hardness in doped LiNbO 3 crystals. / Thomes, William J.; Potter, Kelly; Potter, Barrett G; Weichman, Louis S.

Materials Research Society Symposium Proceedings. ed. / M. Chipara; D.L. Edwards; R.S. Benson; S. Phillips. Vol. 851 2005. p. 301-306 NN7.3.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thomes, WJ, Potter, K, Potter, BG & Weichman, LS 2005, Correlation of optical luminescence with radiation hardness in doped LiNbO 3 crystals. in M Chipara, DL Edwards, RS Benson & S Phillips (eds), Materials Research Society Symposium Proceedings. vol. 851, NN7.3, pp. 301-306, 2004 MRS Fall Meeting, Boston, MA, United States, 11/29/04.
Thomes WJ, Potter K, Potter BG, Weichman LS. Correlation of optical luminescence with radiation hardness in doped LiNbO 3 crystals. In Chipara M, Edwards DL, Benson RS, Phillips S, editors, Materials Research Society Symposium Proceedings. Vol. 851. 2005. p. 301-306. NN7.3
Thomes, William J. ; Potter, Kelly ; Potter, Barrett G ; Weichman, Louis S. / Correlation of optical luminescence with radiation hardness in doped LiNbO 3 crystals. Materials Research Society Symposium Proceedings. editor / M. Chipara ; D.L. Edwards ; R.S. Benson ; S. Phillips. Vol. 851 2005. pp. 301-306
@inproceedings{1f5b67d0cd3645c58f6d4ec71458fdec,
title = "Correlation of optical luminescence with radiation hardness in doped LiNbO 3 crystals",
abstract = "Transient ionizing radiation fields have been observed to cause substantial optical loss in undoped LiNbO 3 crystals operating at 1.06 microns. This loss is slow to recover and makes the selection of this material for Q-switch applications in radiation environments unfeasible. We have studied the effects of Mg doping on the radiation response of LiNbO 3 crystals and have investigated the optical luminescence of doped and undoped samples. Our results indicate a strong correlation between crystal defects, formed primarily during crystal growth, and the radiation-induced optical loss exhibited by these materials. These findings have enabled us to produce radiation-hard LiNbO 3 crystals for use in high gamma-field environments.",
author = "Thomes, {William J.} and Kelly Potter and Potter, {Barrett G} and Weichman, {Louis S.}",
year = "2005",
language = "English (US)",
volume = "851",
pages = "301--306",
editor = "M. Chipara and D.L. Edwards and R.S. Benson and S. Phillips",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Correlation of optical luminescence with radiation hardness in doped LiNbO 3 crystals

AU - Thomes, William J.

AU - Potter, Kelly

AU - Potter, Barrett G

AU - Weichman, Louis S.

PY - 2005

Y1 - 2005

N2 - Transient ionizing radiation fields have been observed to cause substantial optical loss in undoped LiNbO 3 crystals operating at 1.06 microns. This loss is slow to recover and makes the selection of this material for Q-switch applications in radiation environments unfeasible. We have studied the effects of Mg doping on the radiation response of LiNbO 3 crystals and have investigated the optical luminescence of doped and undoped samples. Our results indicate a strong correlation between crystal defects, formed primarily during crystal growth, and the radiation-induced optical loss exhibited by these materials. These findings have enabled us to produce radiation-hard LiNbO 3 crystals for use in high gamma-field environments.

AB - Transient ionizing radiation fields have been observed to cause substantial optical loss in undoped LiNbO 3 crystals operating at 1.06 microns. This loss is slow to recover and makes the selection of this material for Q-switch applications in radiation environments unfeasible. We have studied the effects of Mg doping on the radiation response of LiNbO 3 crystals and have investigated the optical luminescence of doped and undoped samples. Our results indicate a strong correlation between crystal defects, formed primarily during crystal growth, and the radiation-induced optical loss exhibited by these materials. These findings have enabled us to produce radiation-hard LiNbO 3 crystals for use in high gamma-field environments.

UR - http://www.scopus.com/inward/record.url?scp=23844468138&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23844468138&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:23844468138

VL - 851

SP - 301

EP - 306

BT - Materials Research Society Symposium Proceedings

A2 - Chipara, M.

A2 - Edwards, D.L.

A2 - Benson, R.S.

A2 - Phillips, S.

ER -