Correlation of pad topography, friction force and removal rate during tungsten chemical mechanical planarization

Yasa Sampurno, Adam Rice, Yun Zhuang, Ara Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The evolution of coefficient of friction and removal rate during 8.5 hours of tungsten chemical mechanical planarization is correlated to pad surface topography via a novel pad surface descriptor termed 'abruptness'. Interferometric analysis results indicate that during the first 2.5 hours of polishing, pad abruptness remains stable. After 5.5 hours, pad abruptness decreases (i.e. surface becomes smoother). Results from polishing show similar trends whereby removal rate and coefficient of friction are stable during the first 2.5 hours period and decrease significantly thereafter. The coefficient of correlation between pad abruptness and coefficient of friction as well as pad abruptness and removal rate are 0.98 and 0.77, respectively.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages621-626
Number of pages6
Volume34
Edition1
DOIs
StatePublished - 2011
Event10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
Duration: Mar 13 2011Mar 14 2011

Other

Other10th China Semiconductor Technology International Conference 2011, CSTIC 2011
CountryChina
CityShanghai
Period3/13/113/14/11

Fingerprint

Chemical mechanical polishing
Topography
Tungsten
Friction
Polishing
Surface topography

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Correlation of pad topography, friction force and removal rate during tungsten chemical mechanical planarization. / Sampurno, Yasa; Rice, Adam; Zhuang, Yun; Philipossian, Ara.

ECS Transactions. Vol. 34 1. ed. 2011. p. 621-626.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sampurno, Y, Rice, A, Zhuang, Y & Philipossian, A 2011, Correlation of pad topography, friction force and removal rate during tungsten chemical mechanical planarization. in ECS Transactions. 1 edn, vol. 34, pp. 621-626, 10th China Semiconductor Technology International Conference 2011, CSTIC 2011, Shanghai, China, 3/13/11. https://doi.org/10.1149/1.3567648
Sampurno, Yasa ; Rice, Adam ; Zhuang, Yun ; Philipossian, Ara. / Correlation of pad topography, friction force and removal rate during tungsten chemical mechanical planarization. ECS Transactions. Vol. 34 1. ed. 2011. pp. 621-626
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