Coulomb effects in optically excited semiconductor quantum dots

Y. Z. Hu; M. Lindberg; S. W. Koch; N. Peyghambarian

doi:10.1117/12.18113

Coulomb effects in optically excited semiconductor quantum dots

Y. Z. Hu, M. Lindberg, S. W. Koch, N. Peyghambarian

Optical Sciences, College of

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The linear and nonlinear optical properties of semiconductor microcrystallites are analyzed taking into account the Coulomb interaction between the carriers and the influence of surface charges. A numerical matrix diagonalization method is used to evaluate the energy eigenvalues and the corresponding eigenstates. It is predicted that excited two-pair states lead to a pronounced induced absorption on the high energy side of the one-pair resonance. This prediction is confirmed by femtosecond and nanosecond experiments in CdSe and CdS quantum dots. Additionally, effects of traps or impurities and external dc electric fields are discussed.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Publ by Int Soc for Optical Engineering
Pages	88-97
Number of pages	10
ISBN (Print)	0819402575, 9780819402578
DOIs	https://doi.org/10.1117/12.18113
State	Published - 1990
Event	Nonlinear Optical Materials and Devices for Photonic Switching - Los Angeles, CA, USA Duration: Jan 16 1990 → Jan 17 1990

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1216
ISSN (Print)	0277-786X

Other

Other	Nonlinear Optical Materials and Devices for Photonic Switching
City	Los Angeles, CA, USA
Period	1/16/90 → 1/17/90

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.18113

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Hu, Y. Z., Lindberg, M., Koch, S. W., & Peyghambarian, N. (1990). Coulomb effects in optically excited semiconductor quantum dots. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 88-97). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1216). Publ by Int Soc for Optical Engineering. https://doi.org/10.1117/12.18113

Coulomb effects in optically excited semiconductor quantum dots. / Hu, Y. Z.; Lindberg, M.; Koch, S. W.; Peyghambarian, N.

Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering, 1990. p. 88-97 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1216).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hu, YZ, Lindberg, M, Koch, SW & Peyghambarian, N 1990, Coulomb effects in optically excited semiconductor quantum dots. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1216, Publ by Int Soc for Optical Engineering, pp. 88-97, Nonlinear Optical Materials and Devices for Photonic Switching, Los Angeles, CA, USA, 1/16/90. https://doi.org/10.1117/12.18113

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