Coulomb effects in optically excited semiconductor quantum dots

Y. Z. Hu, M. Lindberg, S. W. Koch, N. Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The linear and nonlinear optical properties of semiconductor microcrystallites are analyzed taking into account the Coulomb interaction between the carriers and the influence of surface charges. A numerical matrix diagonalization method is used to evaluate the energy eigenvalues and the corresponding eigenstates. It is predicted that excited two-pair states lead to a pronounced induced absorption on the high energy side of the one-pair resonance. This prediction is confirmed by femtosecond and nanosecond experiments in CdSe and CdS quantum dots. Additionally, effects of traps or impurities and external dc electric fields are discussed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages88-97
Number of pages10
ISBN (Print)0819402575, 9780819402578
DOIs
StatePublished - 1990
EventNonlinear Optical Materials and Devices for Photonic Switching - Los Angeles, CA, USA
Duration: Jan 16 1990Jan 17 1990

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1216
ISSN (Print)0277-786X

Other

OtherNonlinear Optical Materials and Devices for Photonic Switching
CityLos Angeles, CA, USA
Period1/16/901/17/90

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Hu, Y. Z., Lindberg, M., Koch, S. W., & Peyghambarian, N. (1990). Coulomb effects in optically excited semiconductor quantum dots. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 88-97). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1216). Publ by Int Soc for Optical Engineering. https://doi.org/10.1117/12.18113