Coulomb effects in optically excited semiconductor quantum dots

Y. Z. Hu, M. Lindberg, Stephan W Koch, Nasser N Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The linear and nonlinear optical properties of semiconductor microcrystallites are analyzed taking into account the Coulomb interaction between the carriers and the influence of surface charges. A numerical matrix diagonalization method is used to evaluate the energy eigenvalues and the corresponding eigenstates. It is predicted that excited two-pair states lead to a pronounced induced absorption on the high energy side of the one-pair resonance. This prediction is confirmed by femtosecond and nanosecond experiments in CdSe and CdS quantum dots. Additionally, effects of traps or impurities and external dc electric fields are discussed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsNasser Peygambarian
PublisherPubl by Int Soc for Optical Engineering
Pages88-97
Number of pages10
Volume1216
ISBN (Print)0819402575
StatePublished - 1990
EventNonlinear Optical Materials and Devices for Photonic Switching - Los Angeles, CA, USA
Duration: Jan 16 1990Jan 17 1990

Other

OtherNonlinear Optical Materials and Devices for Photonic Switching
CityLos Angeles, CA, USA
Period1/16/901/17/90

Fingerprint

Surface charge
Coulomb interactions
Semiconductor quantum dots
Optical properties
quantum dots
Electric fields
Impurities
Semiconductor materials
matrix methods
eigenvectors
eigenvalues
Experiments
traps
optical properties
impurities
electric fields
energy
predictions
interactions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Hu, Y. Z., Lindberg, M., Koch, S. W., & Peyghambarian, N. N. (1990). Coulomb effects in optically excited semiconductor quantum dots. In N. Peygambarian (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1216, pp. 88-97). Publ by Int Soc for Optical Engineering.

Coulomb effects in optically excited semiconductor quantum dots. / Hu, Y. Z.; Lindberg, M.; Koch, Stephan W; Peyghambarian, Nasser N.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Nasser Peygambarian. Vol. 1216 Publ by Int Soc for Optical Engineering, 1990. p. 88-97.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hu, YZ, Lindberg, M, Koch, SW & Peyghambarian, NN 1990, Coulomb effects in optically excited semiconductor quantum dots. in N Peygambarian (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1216, Publ by Int Soc for Optical Engineering, pp. 88-97, Nonlinear Optical Materials and Devices for Photonic Switching, Los Angeles, CA, USA, 1/16/90.
Hu YZ, Lindberg M, Koch SW, Peyghambarian NN. Coulomb effects in optically excited semiconductor quantum dots. In Peygambarian N, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1216. Publ by Int Soc for Optical Engineering. 1990. p. 88-97
Hu, Y. Z. ; Lindberg, M. ; Koch, Stephan W ; Peyghambarian, Nasser N. / Coulomb effects in optically excited semiconductor quantum dots. Proceedings of SPIE - The International Society for Optical Engineering. editor / Nasser Peygambarian. Vol. 1216 Publ by Int Soc for Optical Engineering, 1990. pp. 88-97
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