Abstract
The linear and nonlinear optical properties of semiconductor microcrystallites are analyzed taking into account the Coulomb interaction between the carriers and the influence of surface charges. A numerical matrix diagonalization method is used to evaluate the energy eigenvalues and the corresponding eigenstates. It is predicted that excited two-pair states lead to a pronounced induced absorption on the high energy side of the one-pair resonance. This prediction is confirmed by femtosecond and nanosecond experiments in CdSe and CdS quantum dots. Additionally, effects of traps or impurities and external dc electric fields are discussed.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | Nasser Peygambarian |
| Publisher | Publ by Int Soc for Optical Engineering |
| Pages | 88-97 |
| Number of pages | 10 |
| Volume | 1216 |
| ISBN (Print) | 0819402575 |
| State | Published - 1990 |
| Event | Nonlinear Optical Materials and Devices for Photonic Switching - Los Angeles, CA, USA Duration: Jan 16 1990 → Jan 17 1990 |
Other
| Other | Nonlinear Optical Materials and Devices for Photonic Switching |
|---|---|
| City | Los Angeles, CA, USA |
| Period | 1/16/90 → 1/17/90 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Coulomb effects in optically excited semiconductor quantum dots. / Hu, Y. Z.; Lindberg, M.; Koch, Stephan W; Peyghambarian, Nasser N.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Nasser Peygambarian. Vol. 1216 Publ by Int Soc for Optical Engineering, 1990. p. 88-97.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Coulomb effects in optically excited semiconductor quantum dots
AU - Hu, Y. Z.
AU - Lindberg, M.
AU - Koch, Stephan W
AU - Peyghambarian, Nasser N
PY - 1990
Y1 - 1990
N2 - The linear and nonlinear optical properties of semiconductor microcrystallites are analyzed taking into account the Coulomb interaction between the carriers and the influence of surface charges. A numerical matrix diagonalization method is used to evaluate the energy eigenvalues and the corresponding eigenstates. It is predicted that excited two-pair states lead to a pronounced induced absorption on the high energy side of the one-pair resonance. This prediction is confirmed by femtosecond and nanosecond experiments in CdSe and CdS quantum dots. Additionally, effects of traps or impurities and external dc electric fields are discussed.
AB - The linear and nonlinear optical properties of semiconductor microcrystallites are analyzed taking into account the Coulomb interaction between the carriers and the influence of surface charges. A numerical matrix diagonalization method is used to evaluate the energy eigenvalues and the corresponding eigenstates. It is predicted that excited two-pair states lead to a pronounced induced absorption on the high energy side of the one-pair resonance. This prediction is confirmed by femtosecond and nanosecond experiments in CdSe and CdS quantum dots. Additionally, effects of traps or impurities and external dc electric fields are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0025629753&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025629753&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0025629753
SN - 0819402575
VL - 1216
SP - 88
EP - 97
BT - Proceedings of SPIE - The International Society for Optical Engineering
A2 - Peygambarian, Nasser
PB - Publ by Int Soc for Optical Engineering
ER -