### Abstract

A theoretical analysis of the linear and third-order nonlinear optical properties that includes the one- and two-electron-hole-pair (EHP) states was carried out numerically. The results consistently show that Coulomb effects are important even for the smallest quantum dots. The binding energy of the energetically lowest two-EHP state (loosely referred to as a biexciton), which is a measure of the strength of the Coulomb interaction, is found to increase with decreasing dot radius. It is predicted that energetically higher two-pair states in quantum dots should be quite easily observable as increasing probe absorption on the high-energy side of the one-EHP resonances. Calculations were performed for intrinsic semiconductor quantum dots as well as for quantum dots with trapped charges or impurities. All the investigations show that the predicted features are quite universal and even enhanced in systems with charged impurities or traps. Experiments on quantum dots in a glass matrix clearly show the predicted induced absorption in addition to the bleaching of the inhomogeneously broadened one-EHP resonances.

Original language | English (US) |
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Title of host publication | XVII International Conference on Quantum Electronics. Digest of |

Publisher | Publ by IEEE |

Pages | 34 |

Number of pages | 1 |

State | Published - 1990 |

Event | 17th International Conference on Quantum Electronics - IQEC '90 - Anaheim, CA, USA Duration: May 21 1990 → May 25 1990 |

### Other

Other | 17th International Conference on Quantum Electronics - IQEC '90 |
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City | Anaheim, CA, USA |

Period | 5/21/90 → 5/25/90 |

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### ASJC Scopus subject areas

- Engineering(all)

### Cite this

*XVII International Conference on Quantum Electronics. Digest of*(pp. 34). Publ by IEEE.

**Coulomb effects in semiconductor quantum dots.** / Koch, Stephan W; Hu, Y. Z.; Lindberg, M.; Peyghambarian, Nasser N.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

*XVII International Conference on Quantum Electronics. Digest of.*Publ by IEEE, pp. 34, 17th International Conference on Quantum Electronics - IQEC '90, Anaheim, CA, USA, 5/21/90.

}

TY - GEN

T1 - Coulomb effects in semiconductor quantum dots

AU - Koch, Stephan W

AU - Hu, Y. Z.

AU - Lindberg, M.

AU - Peyghambarian, Nasser N

PY - 1990

Y1 - 1990

N2 - A theoretical analysis of the linear and third-order nonlinear optical properties that includes the one- and two-electron-hole-pair (EHP) states was carried out numerically. The results consistently show that Coulomb effects are important even for the smallest quantum dots. The binding energy of the energetically lowest two-EHP state (loosely referred to as a biexciton), which is a measure of the strength of the Coulomb interaction, is found to increase with decreasing dot radius. It is predicted that energetically higher two-pair states in quantum dots should be quite easily observable as increasing probe absorption on the high-energy side of the one-EHP resonances. Calculations were performed for intrinsic semiconductor quantum dots as well as for quantum dots with trapped charges or impurities. All the investigations show that the predicted features are quite universal and even enhanced in systems with charged impurities or traps. Experiments on quantum dots in a glass matrix clearly show the predicted induced absorption in addition to the bleaching of the inhomogeneously broadened one-EHP resonances.

AB - A theoretical analysis of the linear and third-order nonlinear optical properties that includes the one- and two-electron-hole-pair (EHP) states was carried out numerically. The results consistently show that Coulomb effects are important even for the smallest quantum dots. The binding energy of the energetically lowest two-EHP state (loosely referred to as a biexciton), which is a measure of the strength of the Coulomb interaction, is found to increase with decreasing dot radius. It is predicted that energetically higher two-pair states in quantum dots should be quite easily observable as increasing probe absorption on the high-energy side of the one-EHP resonances. Calculations were performed for intrinsic semiconductor quantum dots as well as for quantum dots with trapped charges or impurities. All the investigations show that the predicted features are quite universal and even enhanced in systems with charged impurities or traps. Experiments on quantum dots in a glass matrix clearly show the predicted induced absorption in addition to the bleaching of the inhomogeneously broadened one-EHP resonances.

UR - http://www.scopus.com/inward/record.url?scp=0025545542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025545542&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025545542

SP - 34

BT - XVII International Conference on Quantum Electronics. Digest of

PB - Publ by IEEE

ER -