Coulomb effects in semiconductor quantum dots

Stephan W Koch, Y. Z. Hu, M. Lindberg, Nasser N Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A theoretical analysis of the linear and third-order nonlinear optical properties that includes the one- and two-electron-hole-pair (EHP) states was carried out numerically. The results consistently show that Coulomb effects are important even for the smallest quantum dots. The binding energy of the energetically lowest two-EHP state (loosely referred to as a biexciton), which is a measure of the strength of the Coulomb interaction, is found to increase with decreasing dot radius. It is predicted that energetically higher two-pair states in quantum dots should be quite easily observable as increasing probe absorption on the high-energy side of the one-EHP resonances. Calculations were performed for intrinsic semiconductor quantum dots as well as for quantum dots with trapped charges or impurities. All the investigations show that the predicted features are quite universal and even enhanced in systems with charged impurities or traps. Experiments on quantum dots in a glass matrix clearly show the predicted induced absorption in addition to the bleaching of the inhomogeneously broadened one-EHP resonances.

Original languageEnglish (US)
Title of host publicationXVII International Conference on Quantum Electronics. Digest of
PublisherPubl by IEEE
Pages34
Number of pages1
StatePublished - 1990
Event17th International Conference on Quantum Electronics - IQEC '90 - Anaheim, CA, USA
Duration: May 21 1990May 25 1990

Other

Other17th International Conference on Quantum Electronics - IQEC '90
CityAnaheim, CA, USA
Period5/21/905/25/90

Fingerprint

Semiconductor quantum dots
Electrons
Impurities
Bleaching
Coulomb interactions
Binding energy
Optical properties
Glass
Experiments

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Koch, S. W., Hu, Y. Z., Lindberg, M., & Peyghambarian, N. N. (1990). Coulomb effects in semiconductor quantum dots. In XVII International Conference on Quantum Electronics. Digest of (pp. 34). Publ by IEEE.

Coulomb effects in semiconductor quantum dots. / Koch, Stephan W; Hu, Y. Z.; Lindberg, M.; Peyghambarian, Nasser N.

XVII International Conference on Quantum Electronics. Digest of. Publ by IEEE, 1990. p. 34.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Koch, SW, Hu, YZ, Lindberg, M & Peyghambarian, NN 1990, Coulomb effects in semiconductor quantum dots. in XVII International Conference on Quantum Electronics. Digest of. Publ by IEEE, pp. 34, 17th International Conference on Quantum Electronics - IQEC '90, Anaheim, CA, USA, 5/21/90.
Koch SW, Hu YZ, Lindberg M, Peyghambarian NN. Coulomb effects in semiconductor quantum dots. In XVII International Conference on Quantum Electronics. Digest of. Publ by IEEE. 1990. p. 34
Koch, Stephan W ; Hu, Y. Z. ; Lindberg, M. ; Peyghambarian, Nasser N. / Coulomb effects in semiconductor quantum dots. XVII International Conference on Quantum Electronics. Digest of. Publ by IEEE, 1990. pp. 34
@inproceedings{d7bf74704cd7426e9fe9479523acdb08,
title = "Coulomb effects in semiconductor quantum dots",
abstract = "A theoretical analysis of the linear and third-order nonlinear optical properties that includes the one- and two-electron-hole-pair (EHP) states was carried out numerically. The results consistently show that Coulomb effects are important even for the smallest quantum dots. The binding energy of the energetically lowest two-EHP state (loosely referred to as a biexciton), which is a measure of the strength of the Coulomb interaction, is found to increase with decreasing dot radius. It is predicted that energetically higher two-pair states in quantum dots should be quite easily observable as increasing probe absorption on the high-energy side of the one-EHP resonances. Calculations were performed for intrinsic semiconductor quantum dots as well as for quantum dots with trapped charges or impurities. All the investigations show that the predicted features are quite universal and even enhanced in systems with charged impurities or traps. Experiments on quantum dots in a glass matrix clearly show the predicted induced absorption in addition to the bleaching of the inhomogeneously broadened one-EHP resonances.",
author = "Koch, {Stephan W} and Hu, {Y. Z.} and M. Lindberg and Peyghambarian, {Nasser N}",
year = "1990",
language = "English (US)",
pages = "34",
booktitle = "XVII International Conference on Quantum Electronics. Digest of",
publisher = "Publ by IEEE",

}

TY - GEN

T1 - Coulomb effects in semiconductor quantum dots

AU - Koch, Stephan W

AU - Hu, Y. Z.

AU - Lindberg, M.

AU - Peyghambarian, Nasser N

PY - 1990

Y1 - 1990

N2 - A theoretical analysis of the linear and third-order nonlinear optical properties that includes the one- and two-electron-hole-pair (EHP) states was carried out numerically. The results consistently show that Coulomb effects are important even for the smallest quantum dots. The binding energy of the energetically lowest two-EHP state (loosely referred to as a biexciton), which is a measure of the strength of the Coulomb interaction, is found to increase with decreasing dot radius. It is predicted that energetically higher two-pair states in quantum dots should be quite easily observable as increasing probe absorption on the high-energy side of the one-EHP resonances. Calculations were performed for intrinsic semiconductor quantum dots as well as for quantum dots with trapped charges or impurities. All the investigations show that the predicted features are quite universal and even enhanced in systems with charged impurities or traps. Experiments on quantum dots in a glass matrix clearly show the predicted induced absorption in addition to the bleaching of the inhomogeneously broadened one-EHP resonances.

AB - A theoretical analysis of the linear and third-order nonlinear optical properties that includes the one- and two-electron-hole-pair (EHP) states was carried out numerically. The results consistently show that Coulomb effects are important even for the smallest quantum dots. The binding energy of the energetically lowest two-EHP state (loosely referred to as a biexciton), which is a measure of the strength of the Coulomb interaction, is found to increase with decreasing dot radius. It is predicted that energetically higher two-pair states in quantum dots should be quite easily observable as increasing probe absorption on the high-energy side of the one-EHP resonances. Calculations were performed for intrinsic semiconductor quantum dots as well as for quantum dots with trapped charges or impurities. All the investigations show that the predicted features are quite universal and even enhanced in systems with charged impurities or traps. Experiments on quantum dots in a glass matrix clearly show the predicted induced absorption in addition to the bleaching of the inhomogeneously broadened one-EHP resonances.

UR - http://www.scopus.com/inward/record.url?scp=0025545542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025545542&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025545542

SP - 34

BT - XVII International Conference on Quantum Electronics. Digest of

PB - Publ by IEEE

ER -