CuInSe2/Si heterojunctions for photovoltaic applications

Okechukwu N. Akpa, Shaik Shoieb, Trenton R. Thompson, Tamara F. Isaacs-Smith, Philip Anderson, Supapan Seraphin, Kalyan K. Das

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Growth and characterization of CuInSe2 (CIS) thin films deposited on Si, for the purpose of forming heterojunctions to investigate the suitability of the material system for high efficiency solar cells, is reported here. Deposition was obtained by RF magnetron sputtering using a stoichiometric CIS target. As CIS and Si are closely lattice matched, large grain polycrystalline films were obtained. Rutherford backscattering spectroscopy (RBS) indicated that these CIS films have a composition of Cu 0.85In1.1Se1.9. Circular diodes were fabricated and the current- voltage characteristics of these diodes indicated that reasonable quality p-n junctions were obtained. The forward current of these devices increased by about three orders of magnitude, from 0.003 to 2.65 mA at a bias of 2 V when illuminated with a 75 watt halogen lamp. Large area samples 1 cm x 1 cm, were patterned with a window shaped contact and under illumination produced approximately 90 mV and 0.5 mA when measured in series with a precision multimeter and picoammeter. The strong response to illumination indicated that the material system has a high potential for use as a solar cell.

Original languageEnglish (US)
Title of host publicationTMS Annual Meeting
Pages3-8
Number of pages6
Volume3
StatePublished - 2010
EventTMS 2010 - 139th Annual Meeting and Exhibition - Seattle, WA, United States
Duration: Feb 14 2010Feb 18 2010

Other

OtherTMS 2010 - 139th Annual Meeting and Exhibition
CountryUnited States
CitySeattle, WA
Period2/14/102/18/10

Fingerprint

Heterojunctions
heterojunctions
Solar cells
Diodes
solar cells
Lighting
illumination
diodes
Halogens
Rutherford backscattering spectroscopy
Current voltage characteristics
p-n junctions
Electric lamps
Magnetron sputtering
halogens
luminaires
backscattering
magnetron sputtering
Thin films
electric potential

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

Cite this

Akpa, O. N., Shoieb, S., Thompson, T. R., Isaacs-Smith, T. F., Anderson, P., Seraphin, S., & Das, K. K. (2010). CuInSe2/Si heterojunctions for photovoltaic applications. In TMS Annual Meeting (Vol. 3, pp. 3-8)

CuInSe2/Si heterojunctions for photovoltaic applications. / Akpa, Okechukwu N.; Shoieb, Shaik; Thompson, Trenton R.; Isaacs-Smith, Tamara F.; Anderson, Philip; Seraphin, Supapan; Das, Kalyan K.

TMS Annual Meeting. Vol. 3 2010. p. 3-8.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akpa, ON, Shoieb, S, Thompson, TR, Isaacs-Smith, TF, Anderson, P, Seraphin, S & Das, KK 2010, CuInSe2/Si heterojunctions for photovoltaic applications. in TMS Annual Meeting. vol. 3, pp. 3-8, TMS 2010 - 139th Annual Meeting and Exhibition, Seattle, WA, United States, 2/14/10.
Akpa ON, Shoieb S, Thompson TR, Isaacs-Smith TF, Anderson P, Seraphin S et al. CuInSe2/Si heterojunctions for photovoltaic applications. In TMS Annual Meeting. Vol. 3. 2010. p. 3-8
Akpa, Okechukwu N. ; Shoieb, Shaik ; Thompson, Trenton R. ; Isaacs-Smith, Tamara F. ; Anderson, Philip ; Seraphin, Supapan ; Das, Kalyan K. / CuInSe2/Si heterojunctions for photovoltaic applications. TMS Annual Meeting. Vol. 3 2010. pp. 3-8
@inproceedings{90afed2dc2614a3abbf2e437163df7e1,
title = "CuInSe2/Si heterojunctions for photovoltaic applications",
abstract = "Growth and characterization of CuInSe2 (CIS) thin films deposited on Si, for the purpose of forming heterojunctions to investigate the suitability of the material system for high efficiency solar cells, is reported here. Deposition was obtained by RF magnetron sputtering using a stoichiometric CIS target. As CIS and Si are closely lattice matched, large grain polycrystalline films were obtained. Rutherford backscattering spectroscopy (RBS) indicated that these CIS films have a composition of Cu 0.85In1.1Se1.9. Circular diodes were fabricated and the current- voltage characteristics of these diodes indicated that reasonable quality p-n junctions were obtained. The forward current of these devices increased by about three orders of magnitude, from 0.003 to 2.65 mA at a bias of 2 V when illuminated with a 75 watt halogen lamp. Large area samples 1 cm x 1 cm, were patterned with a window shaped contact and under illumination produced approximately 90 mV and 0.5 mA when measured in series with a precision multimeter and picoammeter. The strong response to illumination indicated that the material system has a high potential for use as a solar cell.",
author = "Akpa, {Okechukwu N.} and Shaik Shoieb and Thompson, {Trenton R.} and Isaacs-Smith, {Tamara F.} and Philip Anderson and Supapan Seraphin and Das, {Kalyan K.}",
year = "2010",
language = "English (US)",
isbn = "9780873397537",
volume = "3",
pages = "3--8",
booktitle = "TMS Annual Meeting",

}

TY - GEN

T1 - CuInSe2/Si heterojunctions for photovoltaic applications

AU - Akpa, Okechukwu N.

AU - Shoieb, Shaik

AU - Thompson, Trenton R.

AU - Isaacs-Smith, Tamara F.

AU - Anderson, Philip

AU - Seraphin, Supapan

AU - Das, Kalyan K.

PY - 2010

Y1 - 2010

N2 - Growth and characterization of CuInSe2 (CIS) thin films deposited on Si, for the purpose of forming heterojunctions to investigate the suitability of the material system for high efficiency solar cells, is reported here. Deposition was obtained by RF magnetron sputtering using a stoichiometric CIS target. As CIS and Si are closely lattice matched, large grain polycrystalline films were obtained. Rutherford backscattering spectroscopy (RBS) indicated that these CIS films have a composition of Cu 0.85In1.1Se1.9. Circular diodes were fabricated and the current- voltage characteristics of these diodes indicated that reasonable quality p-n junctions were obtained. The forward current of these devices increased by about three orders of magnitude, from 0.003 to 2.65 mA at a bias of 2 V when illuminated with a 75 watt halogen lamp. Large area samples 1 cm x 1 cm, were patterned with a window shaped contact and under illumination produced approximately 90 mV and 0.5 mA when measured in series with a precision multimeter and picoammeter. The strong response to illumination indicated that the material system has a high potential for use as a solar cell.

AB - Growth and characterization of CuInSe2 (CIS) thin films deposited on Si, for the purpose of forming heterojunctions to investigate the suitability of the material system for high efficiency solar cells, is reported here. Deposition was obtained by RF magnetron sputtering using a stoichiometric CIS target. As CIS and Si are closely lattice matched, large grain polycrystalline films were obtained. Rutherford backscattering spectroscopy (RBS) indicated that these CIS films have a composition of Cu 0.85In1.1Se1.9. Circular diodes were fabricated and the current- voltage characteristics of these diodes indicated that reasonable quality p-n junctions were obtained. The forward current of these devices increased by about three orders of magnitude, from 0.003 to 2.65 mA at a bias of 2 V when illuminated with a 75 watt halogen lamp. Large area samples 1 cm x 1 cm, were patterned with a window shaped contact and under illumination produced approximately 90 mV and 0.5 mA when measured in series with a precision multimeter and picoammeter. The strong response to illumination indicated that the material system has a high potential for use as a solar cell.

UR - http://www.scopus.com/inward/record.url?scp=77952397734&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952397734&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9780873397537

VL - 3

SP - 3

EP - 8

BT - TMS Annual Meeting

ER -