Deep-ultraviolet frequency converted optically pumped semiconductor laser

Yushi Kaneda, Tsuei Lian Wang, J. M. Yarborough, Mahmound Fallahi, Jerome V. Moloney, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A frequency-converted optically pumped semiconductor laser (OPSL) is described. The 976-nm OPSL is frequency doubled intracavity and is forced to operate in single longitudinal mode. An external resonator, containing a cesium lithium borate crystal is locked to the 488-nm fundamental, generating the second harmonic at 244 nm. Continuous wave output in excess of 200 mW is generated.

Original languageEnglish (US)
Title of host publicationSolid State Lasers XVIII
Subtitle of host publicationTechnology and Devices
DOIs
StatePublished - Jun 15 2009
EventSolid State Lasers XVIII: Technology and Devices - San Jose, CA, United States
Duration: Jan 25 2009Jan 29 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7193
ISSN (Print)0277-786X

Other

OtherSolid State Lasers XVIII: Technology and Devices
CountryUnited States
CitySan Jose, CA
Period1/25/091/29/09

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Keywords

  • CLBO
  • Optically pumped semiconductor laser (OPSL)
  • Ultraviolet laser
  • Vertical external cavity surface emitting laser (VECSEL)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kaneda, Y., Wang, T. L., Yarborough, J. M., Fallahi, M., Moloney, J. V., Yoshimura, M., Mori, Y., & Sasaki, T. (2009). Deep-ultraviolet frequency converted optically pumped semiconductor laser. In Solid State Lasers XVIII: Technology and Devices [719318] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7193). https://doi.org/10.1117/12.811888