Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction

Paul Winget, Laura K. Schirra, David Cornil, Hong Li, Veaceslav Coropceanu, Paul F. Ndione, Ajaya K. Sigdel, David S. Ginley, Joseph J. Berry, Jaewon Shim, Hyungchui Kim, Bernard Kippelen, Jean Luc Brédas, Oliver L.A. Monti

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.

Original languageEnglish (US)
Pages (from-to)4711-4716
Number of pages6
JournalAdvanced Materials
Volume26
Issue number27
DOIs
StatePublished - Jul 16 2014

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Keywords

  • PTCDI
  • ZnO
  • interfacial electronic structure
  • organic semiconductor
  • surface defects

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Winget, P., Schirra, L. K., Cornil, D., Li, H., Coropceanu, V., Ndione, P. F., Sigdel, A. K., Ginley, D. S., Berry, J. J., Shim, J., Kim, H., Kippelen, B., Brédas, J. L., & Monti, O. L. A. (2014). Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction. Advanced Materials, 26(27), 4711-4716. https://doi.org/10.1002/adma.201305351