Defects in oxygen-implanted silicon-on-insulator structures probed with positrons

Bent Nielsen, K. G. Lynn, T. C. Leung, B. F. Cordts, Supapan Seraphin

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Defects in a silicon-on-insulator structure formed by high-energy (200-keV) oxygen implantation has been studied utilizing a variable-energy positron beam. The positron-based probe is found to be especially sensitive to the condition of the top Si layer. Open-volume defects (cavities) are detected in the top 80-nm Si layer in the as-irradiated state. The majority of these defects are removed by high-temperature annealing (1300°C) after which the positron response correlates with the density of dislocations observed by transmission electron microscopy. Variations in dislocation density across a wafer were probed with positrons, demonstrating the potential of positrons in defect topology.

Original languageEnglish (US)
Pages (from-to)1812-1816
Number of pages5
JournalPhysical Review B
Volume44
Issue number4
DOIs
StatePublished - 1991

Fingerprint

Positrons
Silicon
positrons
insulators
Oxygen
Defects
defects
silicon
oxygen
implantation
topology
Topology
wafers
Annealing
Transmission electron microscopy
transmission electron microscopy
cavities
annealing
energy
probes

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Defects in oxygen-implanted silicon-on-insulator structures probed with positrons. / Nielsen, Bent; Lynn, K. G.; Leung, T. C.; Cordts, B. F.; Seraphin, Supapan.

In: Physical Review B, Vol. 44, No. 4, 1991, p. 1812-1816.

Research output: Contribution to journalArticle

Nielsen, Bent ; Lynn, K. G. ; Leung, T. C. ; Cordts, B. F. ; Seraphin, Supapan. / Defects in oxygen-implanted silicon-on-insulator structures probed with positrons. In: Physical Review B. 1991 ; Vol. 44, No. 4. pp. 1812-1816.
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