Delta-doped CCDs: High QE with long-term stability at UV and visible wavelengths

Shouleh Nikzad, M. E. Hoenk, P. J. Grunthaner, R. W. Terhune, F. J. Grunthaner, R. Winzenread, M. Fattahi, Hsin Fu Tseng, M. Lesser

Research output: Contribution to journalConference article

43 Scopus citations

Abstract

Delta-doped CCDs, developed at JPL's Microdevices Laboratory, have achieved stable 100% internal quantum efficiency in the visible and near UV regions of the spectrum. In this approach, an epitaxial silicon layer is grown on a fully-processed commercial CCD using molecular beam epitaxy. During the silicon growth on the CCD, 30% of a monolayer of boron atoms are deposited on the surface, followed by a 15 € silicon layer for surface passivation. The boron is nominally incorporated within a single atomic layer at the back surface of the device, resulting in the effective elimination of the backside potential well. The measured quantum efficiency is in good agreement with the theoretical limit imposed by reflection from the Si surface. Enhancement of the total quantum efficiency in the blue visible and near UV has been demonstrated by depositing antireflection coatings on the delta-doped CCD. Recent results on anüreflection coatings and quantum efficiency measurements are discussed.

Original languageEnglish (US)
Pages (from-to)907-915
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2198
DOIs
StatePublished - Jun 1 1994
EventInstrumentation in Astronomy VIII 1994 - Kailua, Kona, United States
Duration: Mar 13 1994Mar 18 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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    Nikzad, S., Hoenk, M. E., Grunthaner, P. J., Terhune, R. W., Grunthaner, F. J., Winzenread, R., Fattahi, M., Tseng, H. F., & Lesser, M. (1994). Delta-doped CCDs: High QE with long-term stability at UV and visible wavelengths. Proceedings of SPIE - The International Society for Optical Engineering, 2198, 907-915. https://doi.org/10.1117/12.176733