Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

Shouleh Nikzad, Michael E. Hoenk, Frank Greer, Blake Jacquot, Steve Monacos, Todd J. Jones, Jordana Blacksberg, Erika Hamden, David Schiminovich, Chris Martin, Patrick Morrissey

Research output: Contribution to journalArticlepeer-review

59 Scopus citations

Abstract

We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far and near ultraviolet in megapixel arrays. We have demonstrated that other important device performance parameters such as dark current are unchanged after these processes. In this paper, we briefly review ultraviolet detection, report on these results, and briefly discuss the techniques and processes employed.

Original languageEnglish (US)
Pages (from-to)365-369
Number of pages5
JournalApplied optics
Volume51
Issue number3
DOIs
StatePublished - Jan 20 2012

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

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