Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

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Abstract

It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.

Original languageEnglish (US)
Article number221106
JournalApplied Physics Letters
Volume96
Issue number22
DOIs
StatePublished - May 31 2010

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quantum efficiency
semiconductor lasers
diodes
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes",
abstract = "It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.",
author = "Jorg Hader and Moloney, {Jerome V} and Koch, {Stephan W}",
year = "2010",
month = "5",
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doi = "10.1063/1.3446889",
language = "English (US)",
volume = "96",
journal = "Applied Physics Letters",
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