Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

J. Hader; J. V. Moloney; S. W. Koch

doi:10.1063/1.3446889

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

J. Hader, J. V. Moloney, S. W. Koch

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

207 Scopus citations

Abstract

It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.

Original language	English (US)
Article number	221106
Journal	Applied Physics Letters
Volume	96
Issue number	22
DOIs	https://doi.org/10.1063/1.3446889
State	Published - May 31 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes",

abstract = "It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.",

author = "J. Hader and Moloney, {J. V.} and Koch, {S. W.}",

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