Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

J. Hader; J. V. Moloney; S. W. Koch

doi:10.1063/1.3446889

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

J. Hader, J. V. Moloney, S. W. Koch

Optical Sciences, College of

Research output: Contribution to journal › Article

200 Scopus citations

Abstract

It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.

Original language	English (US)
Article number	221106
Journal	Applied Physics Letters
Volume	96
Issue number	22
DOIs	https://doi.org/10.1063/1.3446889
State	Published - May 31 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3446889

Fingerprint Dive into the research topics of 'Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes'. Together they form a unique fingerprint.

Cite this

Hader, J., Moloney, J. V., & Koch, S. W. (2010). Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes. Applied Physics Letters, 96(22), [221106]. https://doi.org/10.1063/1.3446889

@article{ea66c2e22b0a45d29a2b738867594c31,

title = "Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes",

abstract = "It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.",

author = "J. Hader and Moloney, {J. V.} and Koch, {S. W.}",

year = "2010",

month = may,

day = "31",

doi = "10.1063/1.3446889",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

PY - 2010/5/31

Y1 - 2010/5/31

N2 - It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.

AB - It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.

UR - http://www.scopus.com/inward/record.url?scp=77953574246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953574246&partnerID=8YFLogxK

U2 - 10.1063/1.3446889

DO - 10.1063/1.3446889

M3 - Article

AN - SCOPUS:77953574246

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 221106

ER -