Abstract
It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.
| Original language | English (US) |
|---|---|
| Article number | 221106 |
| Journal | Applied Physics Letters |
| Volume | 96 |
| Issue number | 22 |
| DOIs | |
| State | Published - May 31 2010 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.
In: Applied Physics Letters, Vol. 96, No. 22, 221106, 31.05.2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
AU - Hader, Jorg
AU - Moloney, Jerome V
AU - Koch, Stephan W
PY - 2010/5/31
Y1 - 2010/5/31
N2 - It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.
AB - It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.
UR - http://www.scopus.com/inward/record.url?scp=77953574246&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77953574246&partnerID=8YFLogxK
U2 - 10.1063/1.3446889
DO - 10.1063/1.3446889
M3 - Article
AN - SCOPUS:77953574246
VL - 96
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 22
M1 - 221106
ER -