Abstract
It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.
Original language | English (US) |
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Article number | 221106 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 22 |
DOIs | |
State | Published - May 31 2010 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)