@article{ea66c2e22b0a45d29a2b738867594c31,
title = "Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes",
abstract = "It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.",
author = "J. Hader and Moloney, {J. V.} and Koch, {S. W.}",
note = "Funding Information: This work was supported by the U.S. Air Force Office of Scientific Research, Contract No. FA9550-07-1-0573, by the Deutsche Forschungsgemeinschaft and the Humboldt Foundation.",
year = "2010",
month = may,
day = "31",
doi = "10.1063/1.3446889",
language = "English (US)",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",
}