Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

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200 Scopus citations

Abstract

It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.

Original languageEnglish (US)
Article number221106
JournalApplied Physics Letters
Volume96
Issue number22
DOIs
StatePublished - May 31 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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