Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The droop of the internal efficiency in GaN-based light emitting devices reflects a carrier loss mechanism that has a stronger dependence on the intrinsic carrier density than the about quadratic dependence of the radiative recombinations. Here we discuss density-activated defect recombination (DADR) [1] as a possible source for this non-radiative loss - at least for the low to medium density regime.

Original languageEnglish (US)
Title of host publication2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
DOIs
StatePublished - 2011
Event2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 - Munich, Germany
Duration: May 22 2011May 26 2011

Other

Other2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
CountryGermany
CityMunich
Period5/22/115/26/11

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Defects
Carrier concentration

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Hader, J., Moloney, J. V., & Koch, S. W. (2011). Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters. In 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 [5942578] https://doi.org/10.1109/CLEOE.2011.5942578

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 2011. 5942578.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hader, J, Moloney, JV & Koch, SW 2011, Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters. in 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011., 5942578, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, Munich, Germany, 5/22/11. https://doi.org/10.1109/CLEOE.2011.5942578
Hader J, Moloney JV, Koch SW. Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters. In 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 2011. 5942578 https://doi.org/10.1109/CLEOE.2011.5942578
Hader, Jorg ; Moloney, Jerome V ; Koch, Stephan W. / Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters. 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 2011.
@inproceedings{31317c54bcfa49b59264fd674c9edf09,
title = "Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters",
abstract = "The droop of the internal efficiency in GaN-based light emitting devices reflects a carrier loss mechanism that has a stronger dependence on the intrinsic carrier density than the about quadratic dependence of the radiative recombinations. Here we discuss density-activated defect recombination (DADR) [1] as a possible source for this non-radiative loss - at least for the low to medium density regime.",
author = "Jorg Hader and Moloney, {Jerome V} and Koch, {Stephan W}",
year = "2011",
doi = "10.1109/CLEOE.2011.5942578",
language = "English (US)",
isbn = "9781457705335",
booktitle = "2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011",

}

TY - GEN

T1 - Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Koch, Stephan W

PY - 2011

Y1 - 2011

N2 - The droop of the internal efficiency in GaN-based light emitting devices reflects a carrier loss mechanism that has a stronger dependence on the intrinsic carrier density than the about quadratic dependence of the radiative recombinations. Here we discuss density-activated defect recombination (DADR) [1] as a possible source for this non-radiative loss - at least for the low to medium density regime.

AB - The droop of the internal efficiency in GaN-based light emitting devices reflects a carrier loss mechanism that has a stronger dependence on the intrinsic carrier density than the about quadratic dependence of the radiative recombinations. Here we discuss density-activated defect recombination (DADR) [1] as a possible source for this non-radiative loss - at least for the low to medium density regime.

UR - http://www.scopus.com/inward/record.url?scp=80052290160&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052290160&partnerID=8YFLogxK

U2 - 10.1109/CLEOE.2011.5942578

DO - 10.1109/CLEOE.2011.5942578

M3 - Conference contribution

AN - SCOPUS:80052290160

SN - 9781457705335

BT - 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

ER -