Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The droop of the internal efficiency in GaN-based light emitting devices reflects a carrier loss mechanism that has a stronger dependence on the intrinsic carrier density than the about quadratic dependence of the radiative recombinations. Here we discuss density-activated defect recombination (DADR) [1] as a possible source for this non-radiative loss - at least for the low to medium density regime.

Original languageEnglish (US)
Title of host publication2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
DOIs
StatePublished - Sep 6 2011
Event2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 - Munich, Germany
Duration: May 22 2011May 26 2011

Publication series

Name2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

Other

Other2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
CountryGermany
CityMunich
Period5/22/115/26/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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