Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A model based on density-activated defect recombination processes is proposed as a possible explanation for the efficiency droop in GaN-based lasers. The model yields very good agreement with experimentally measured efficiencies based on fit parameters that indicate the presence of two types of recombination centers that have different local distributions and recombination rates. The recombination rates of the two types are found to be very similar for devices operating at 530nm and 410nm.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7954
DOIs
StatePublished - 2011
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV - San Francisco, CA, United States
Duration: Jan 25 2011Jan 27 2011

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV
CountryUnited States
CitySan Francisco, CA
Period1/25/111/27/11

Fingerprint

Diode
Recombination
Diodes
Defects
diodes
defects
Lasers
lasers
Model-based
Laser
Model

Keywords

  • Auger recombination
  • efficiency droop
  • gain
  • GaN
  • microscopic modeling
  • photo luminescence
  • Semiconductor lasers

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7954 2011. 79540H.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hader, J, Moloney, JV & Koch, SW 2011, Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7954, 79540H, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, San Francisco, CA, United States, 1/25/11. https://doi.org/10.1117/12.873941
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