@inproceedings{651293d26a4d4f2b9bb2e2e45069a689,
title = "Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes",
abstract = "A model based on density-activated defect recombination processes is proposed as a possible explanation for the efficiency droop in GaN-based lasers. The model yields very good agreement with experimentally measured efficiencies based on fit parameters that indicate the presence of two types of recombination centers that have different local distributions and recombination rates. The recombination rates of the two types are found to be very similar for devices operating at 530nm and 410nm.",
keywords = "Auger recombination, GaN, Semiconductor lasers, efficiency droop, gain, microscopic modeling, photo luminescence",
author = "J. Hader and Moloney, {J. V.} and Koch, {S. W.}",
year = "2011",
month = mar,
day = "28",
doi = "10.1117/12.873941",
language = "English (US)",
isbn = "9780819484918",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Light-Emitting Diodes",
note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV ; Conference date: 25-01-2011 Through 27-01-2011",
}