Abstract
A model based on density-activated defect recombination processes is proposed as a possible explanation for the efficiency droop in GaN-based lasers. The model yields very good agreement with experimentally measured efficiencies based on fit parameters that indicate the presence of two types of recombination centers that have different local distributions and recombination rates. The recombination rates of the two types are found to be very similar for devices operating at 530nm and 410nm.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 7954 |
| DOIs | |
| State | Published - 2011 |
| Event | Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV - San Francisco, CA, United States Duration: Jan 25 2011 → Jan 27 2011 |
Other
| Other | Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 1/25/11 → 1/27/11 |
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Keywords
- Auger recombination
- efficiency droop
- gain
- GaN
- microscopic modeling
- photo luminescence
- Semiconductor lasers
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7954 2011. 79540H.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
AU - Hader, Jorg
AU - Moloney, Jerome V
AU - Koch, Stephan W
PY - 2011
Y1 - 2011
N2 - A model based on density-activated defect recombination processes is proposed as a possible explanation for the efficiency droop in GaN-based lasers. The model yields very good agreement with experimentally measured efficiencies based on fit parameters that indicate the presence of two types of recombination centers that have different local distributions and recombination rates. The recombination rates of the two types are found to be very similar for devices operating at 530nm and 410nm.
AB - A model based on density-activated defect recombination processes is proposed as a possible explanation for the efficiency droop in GaN-based lasers. The model yields very good agreement with experimentally measured efficiencies based on fit parameters that indicate the presence of two types of recombination centers that have different local distributions and recombination rates. The recombination rates of the two types are found to be very similar for devices operating at 530nm and 410nm.
KW - Auger recombination
KW - efficiency droop
KW - gain
KW - GaN
KW - microscopic modeling
KW - photo luminescence
KW - Semiconductor lasers
UR - http://www.scopus.com/inward/record.url?scp=79952959094&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952959094&partnerID=8YFLogxK
U2 - 10.1117/12.873941
DO - 10.1117/12.873941
M3 - Conference contribution
AN - SCOPUS:79952959094
SN - 9780819484918
VL - 7954
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -