Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A model based on density-activated defect recombination processes is proposed as a possible explanation for the efficiency droop in GaN-based lasers. The model yields very good agreement with experimentally measured efficiencies based on fit parameters that indicate the presence of two types of recombination centers that have different local distributions and recombination rates. The recombination rates of the two types are found to be very similar for devices operating at 530nm and 410nm.

Original languageEnglish (US)
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XV
DOIs
StatePublished - Mar 28 2011
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV - San Francisco, CA, United States
Duration: Jan 25 2011Jan 27 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7954
ISSN (Print)0277-786X

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV
CountryUnited States
CitySan Francisco, CA
Period1/25/111/27/11

Keywords

  • Auger recombination
  • GaN
  • Semiconductor lasers
  • efficiency droop
  • gain
  • microscopic modeling
  • photo luminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Hader, J., Moloney, J. V., & Koch, S. W. (2011). Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV [79540H] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7954). https://doi.org/10.1117/12.873941