Dependence of orientation and electrical properties in sputtered ZnO upon deposition conditions and substrate

M. D. Howell, S. Akamine, L. J. LaComb, B. Hadimioglu, T. R. Albrecht, B. T. Khuri-Yakub, L. C. Goddard, T. E. Carver

Research output: Contribution to journalConference article

Abstract

The authors have studied how orientation of planar magnetron sputtered ZnO varies as a function of radius from the center of the sputter target. They show that orientation deviates from normal with increasing radius from center, even on substrates parallel to the sputter cathode. The ZnO was deposited upon C-axis normal sapphire (Al2O3), fused quartz, and 111-Si under varied conditions, including variations in temperature, gas flow rate, sputter power, radial position relative to target center, and substrate angle. Production of high-quality ZnO, as evidenced by the X-ray rocking curve, is demonstrated. The ZnO quality is correlated to composition by stoichiometric measurements. Changes in orientation angle, crystal quality, and deposition angle with increased radius are shown and compared with computer simulations of the extended source.

Original languageEnglish (US)
Pages (from-to)677-680
Number of pages4
JournalUltrasonics Symposium Proceedings
Volume2
StatePublished - Dec 1 1988
Externally publishedYes
EventIEEE 1988 Ultrasonics Symposium - Proceedings - Chicago, IL, USA
Duration: Oct 2 1988Oct 5 1988

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Howell, M. D., Akamine, S., LaComb, L. J., Hadimioglu, B., Albrecht, T. R., Khuri-Yakub, B. T., Goddard, L. C., & Carver, T. E. (1988). Dependence of orientation and electrical properties in sputtered ZnO upon deposition conditions and substrate. Ultrasonics Symposium Proceedings, 2, 677-680.