Dependence of oxide pattern density variation on motor current endpoint detection during shallow trench isolation chemical mechanical planarization

Jamshid Sorooshian, Ara Philipossian, David J. Stein, Robert P. Timon, Dale L. Hetherington

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this study, we evaluate the limitations associated with variable shallow trench isolation (STI) oxide pattern densities for accurate motor current endpoint detection during chemical mechanical planarization (CMP). Results indicate that repeatable motor current endpoint detection can be achieved for STI wafers with oxide pattern density variations of up to 17.4%. Furthermore, results show that a dependence exists between the STI oxide pattern density variation and motor current endpoint success during polishing. According to the findings of this study, a suitable motor current endpoint detection system could yield successful termination points for STI polishing, as well as reduce the need for polishing reworks.

Original languageEnglish (US)
Pages (from-to)1219-1224
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number3
DOIs
StatePublished - Mar 2005

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Chemical mechanical polishing
isolation
Polishing
polishing
Oxides
oxides
chemical detection
wafers

Keywords

  • Chemical mechanical planarization
  • Endpoint detection
  • Motor current
  • Shallow trench isolation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Dependence of oxide pattern density variation on motor current endpoint detection during shallow trench isolation chemical mechanical planarization. / Sorooshian, Jamshid; Philipossian, Ara; Stein, David J.; Timon, Robert P.; Hetherington, Dale L.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 3, 03.2005, p. 1219-1224.

Research output: Contribution to journalArticle

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