Dephasing in the gain region of II-VI semiconductor nanocrystals

H. Giessen, B. Fluegel, G. Mohs, Y. Z. Hu, N. Peyghambarian, U. Woggon, C. Klingshirn, P. Thomas, S. W. Koch

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We investigate the dephasing times in highly excited CdSe and CdS0.3Se0.7 nanocrystals by spectral hole burning throughout the gain region. The energy dependence of the dephasing time T2 is compared between quantum dots in the strong-confinement regime and bulklike microcrystals. T2 in strongly confined quantum dots remains rather constant, whereas the bulklike sample shows a continuous increase of T2 toward the transparency point. This observation is attributed to the different gain mechanisms in the strong and the weak quantum-confinement regimes.

Original languageEnglish (US)
Pages (from-to)1039-1044
Number of pages6
JournalJournal of the Optical Society of America B: Optical Physics
Volume13
Issue number5
DOIs
StatePublished - May 1996

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Dephasing in the gain region of II-VI semiconductor nanocrystals'. Together they form a unique fingerprint.

Cite this