Design and evaluation of pad grooves for copper CMP

D. Rosales-Yeomans, D. Denardis, L. Borucki, Ara Philipossian

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Variations in the chemical mechanisms of copper chemical-mechanical planarization (CMP) can appear due to the effect of pad grooving on (i) net flow under the wafer, (ii) pad, wafer, and slurry temperature, and (iii) reactants and polish debris concentration. Furthermore, changes in the mechanical abrasion of the passive film might appear due to the effect of pad grooving on (i) slurry film thickness under the wafer, (ii) friction force at the pad-wafer interface, (iii) pad compressibility, and (iv) pad-wafer contact area. The effective transport of slurry in and out of the pad-wafer interface becomes critical particularly for processes in which by-products are detrimental to polishing rates. By combining logarithmic and spiral grooves, paths are created to introduce fresh slurry into, and spent slurry and debris out of, the pad-wafer interface. The experimentally grooved pads were tested and statistically compared to a commercial pad in terms of removal rate (RR), average coefficient of friction, and average pad leading edge temperature. Also a flat (i.e., not grooved) pad was included in this study to evaluate in general the effect of pad grooves in copper CMP. The results indicate that the pad achieving the highest relative values for RR, coefficient of friction (COF-), and T- p is the one that combines a negatively directed logarithmic groove with a positively directed spiral groove. This pad results in a 24% increase in RR and a 28% increase in COF- compared to the concentrically grooved pad. To establish the mechanical and chemical contributions to the process, experimental data were then theoretically evaluated. A three-step model in combination with a previously developed flash heating (FH) temperature model was proposed for copper CMP. In all cases, the model root-mean-square (rms) error fell in the range of 322- 674 Åmin, while the experimental repeatability error was in the range of 118- 1100 Åmin. This model presented an expression to characterize the rate of oxide growth (k1) and the addition of a third step to characterize the dissolution rate of copper oxide (k3). The relative values of k1 and k2 (mechanical rate constant) as a function of pV showed that the process was more limited by film removal through mechanical abrasion, especially at low values of pV. However, as pV increased this limitation was reduced and there was a transition to a more balanced process.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume155
Issue number10
DOIs
StatePublished - 2008

Fingerprint

Chemical mechanical polishing
grooves
Copper
Friction
copper
evaluation
Abrasion
Debris
Industrial Oils
wafers
Copper oxides
Polishing
Compressibility
Mean square error
Temperature
Oxides
Byproducts
Film thickness
Rate constants
Dissolution

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Design and evaluation of pad grooves for copper CMP. / Rosales-Yeomans, D.; Denardis, D.; Borucki, L.; Philipossian, Ara.

In: Journal of the Electrochemical Society, Vol. 155, No. 10, 2008.

Research output: Contribution to journalArticle

Rosales-Yeomans, D. ; Denardis, D. ; Borucki, L. ; Philipossian, Ara. / Design and evaluation of pad grooves for copper CMP. In: Journal of the Electrochemical Society. 2008 ; Vol. 155, No. 10.
@article{988ac51c0f32489c93b8d96400e8f9ae,
title = "Design and evaluation of pad grooves for copper CMP",
abstract = "Variations in the chemical mechanisms of copper chemical-mechanical planarization (CMP) can appear due to the effect of pad grooving on (i) net flow under the wafer, (ii) pad, wafer, and slurry temperature, and (iii) reactants and polish debris concentration. Furthermore, changes in the mechanical abrasion of the passive film might appear due to the effect of pad grooving on (i) slurry film thickness under the wafer, (ii) friction force at the pad-wafer interface, (iii) pad compressibility, and (iv) pad-wafer contact area. The effective transport of slurry in and out of the pad-wafer interface becomes critical particularly for processes in which by-products are detrimental to polishing rates. By combining logarithmic and spiral grooves, paths are created to introduce fresh slurry into, and spent slurry and debris out of, the pad-wafer interface. The experimentally grooved pads were tested and statistically compared to a commercial pad in terms of removal rate (RR), average coefficient of friction, and average pad leading edge temperature. Also a flat (i.e., not grooved) pad was included in this study to evaluate in general the effect of pad grooves in copper CMP. The results indicate that the pad achieving the highest relative values for RR, coefficient of friction (COF-), and T- p is the one that combines a negatively directed logarithmic groove with a positively directed spiral groove. This pad results in a 24{\%} increase in RR and a 28{\%} increase in COF- compared to the concentrically grooved pad. To establish the mechanical and chemical contributions to the process, experimental data were then theoretically evaluated. A three-step model in combination with a previously developed flash heating (FH) temperature model was proposed for copper CMP. In all cases, the model root-mean-square (rms) error fell in the range of 322- 674 {\AA}min, while the experimental repeatability error was in the range of 118- 1100 {\AA}min. This model presented an expression to characterize the rate of oxide growth (k1) and the addition of a third step to characterize the dissolution rate of copper oxide (k3). The relative values of k1 and k2 (mechanical rate constant) as a function of pV showed that the process was more limited by film removal through mechanical abrasion, especially at low values of pV. However, as pV increased this limitation was reduced and there was a transition to a more balanced process.",
author = "D. Rosales-Yeomans and D. Denardis and L. Borucki and Ara Philipossian",
year = "2008",
doi = "10.1149/1.2963268",
language = "English (US)",
volume = "155",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "10",

}

TY - JOUR

T1 - Design and evaluation of pad grooves for copper CMP

AU - Rosales-Yeomans, D.

AU - Denardis, D.

AU - Borucki, L.

AU - Philipossian, Ara

PY - 2008

Y1 - 2008

N2 - Variations in the chemical mechanisms of copper chemical-mechanical planarization (CMP) can appear due to the effect of pad grooving on (i) net flow under the wafer, (ii) pad, wafer, and slurry temperature, and (iii) reactants and polish debris concentration. Furthermore, changes in the mechanical abrasion of the passive film might appear due to the effect of pad grooving on (i) slurry film thickness under the wafer, (ii) friction force at the pad-wafer interface, (iii) pad compressibility, and (iv) pad-wafer contact area. The effective transport of slurry in and out of the pad-wafer interface becomes critical particularly for processes in which by-products are detrimental to polishing rates. By combining logarithmic and spiral grooves, paths are created to introduce fresh slurry into, and spent slurry and debris out of, the pad-wafer interface. The experimentally grooved pads were tested and statistically compared to a commercial pad in terms of removal rate (RR), average coefficient of friction, and average pad leading edge temperature. Also a flat (i.e., not grooved) pad was included in this study to evaluate in general the effect of pad grooves in copper CMP. The results indicate that the pad achieving the highest relative values for RR, coefficient of friction (COF-), and T- p is the one that combines a negatively directed logarithmic groove with a positively directed spiral groove. This pad results in a 24% increase in RR and a 28% increase in COF- compared to the concentrically grooved pad. To establish the mechanical and chemical contributions to the process, experimental data were then theoretically evaluated. A three-step model in combination with a previously developed flash heating (FH) temperature model was proposed for copper CMP. In all cases, the model root-mean-square (rms) error fell in the range of 322- 674 Åmin, while the experimental repeatability error was in the range of 118- 1100 Åmin. This model presented an expression to characterize the rate of oxide growth (k1) and the addition of a third step to characterize the dissolution rate of copper oxide (k3). The relative values of k1 and k2 (mechanical rate constant) as a function of pV showed that the process was more limited by film removal through mechanical abrasion, especially at low values of pV. However, as pV increased this limitation was reduced and there was a transition to a more balanced process.

AB - Variations in the chemical mechanisms of copper chemical-mechanical planarization (CMP) can appear due to the effect of pad grooving on (i) net flow under the wafer, (ii) pad, wafer, and slurry temperature, and (iii) reactants and polish debris concentration. Furthermore, changes in the mechanical abrasion of the passive film might appear due to the effect of pad grooving on (i) slurry film thickness under the wafer, (ii) friction force at the pad-wafer interface, (iii) pad compressibility, and (iv) pad-wafer contact area. The effective transport of slurry in and out of the pad-wafer interface becomes critical particularly for processes in which by-products are detrimental to polishing rates. By combining logarithmic and spiral grooves, paths are created to introduce fresh slurry into, and spent slurry and debris out of, the pad-wafer interface. The experimentally grooved pads were tested and statistically compared to a commercial pad in terms of removal rate (RR), average coefficient of friction, and average pad leading edge temperature. Also a flat (i.e., not grooved) pad was included in this study to evaluate in general the effect of pad grooves in copper CMP. The results indicate that the pad achieving the highest relative values for RR, coefficient of friction (COF-), and T- p is the one that combines a negatively directed logarithmic groove with a positively directed spiral groove. This pad results in a 24% increase in RR and a 28% increase in COF- compared to the concentrically grooved pad. To establish the mechanical and chemical contributions to the process, experimental data were then theoretically evaluated. A three-step model in combination with a previously developed flash heating (FH) temperature model was proposed for copper CMP. In all cases, the model root-mean-square (rms) error fell in the range of 322- 674 Åmin, while the experimental repeatability error was in the range of 118- 1100 Åmin. This model presented an expression to characterize the rate of oxide growth (k1) and the addition of a third step to characterize the dissolution rate of copper oxide (k3). The relative values of k1 and k2 (mechanical rate constant) as a function of pV showed that the process was more limited by film removal through mechanical abrasion, especially at low values of pV. However, as pV increased this limitation was reduced and there was a transition to a more balanced process.

UR - http://www.scopus.com/inward/record.url?scp=51849157373&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51849157373&partnerID=8YFLogxK

U2 - 10.1149/1.2963268

DO - 10.1149/1.2963268

M3 - Article

AN - SCOPUS:51849157373

VL - 155

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 10

ER -