Design and performance of a controlled atmosphere polisher for silicon crystal polishing

Toshiro Doi, Ara Philipossian, Koichiro Ichikawa

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

A controlled atmosphere polisher (CAP) was manufactured featuring a pressure-resistant chamber that hermetically contains the entire processing unit. The machine allows chamber gases to be changed. A vacuum pump or a compressor is used to maintain chamber pressure at a desired set point. When polishing under an air ambient, polish rates under partial vacuum or under pressurized conditions are significantly higher than those under conventional polishing conditions. Differences in polish rate are also seen depending on the type of gas used during polishing. This polishing method and tool have the potential of efficiently controlling and enhancing silicon polish rates.

Original languageEnglish (US)
Pages (from-to)G158-G160
JournalElectrochemical and Solid-State Letters
Volume7
Issue number8
DOIs
StatePublished - Sep 6 2004

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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