Integrated receivers associating an amplifier with a photodiode increases the detector sensitivity. During this work, we have designed and characterized the FET amplifier. The field-effect transistor JFET has been fabricated on a GaAs semi-insulating substrate using liquid phase epitaxy. The structure involved two epitaxial layers of n-GaAs for the channel and GaAlAs for the gate. The design, the technology process and the current-voltage characteristics are described. A transconductance values over 10 mA/V has been achieved and the transistor have shown a threshold voltage of 4. 6 V. The previous results will be applied to two kinds of structures: FET devices without the detector and for the amplifier integrating the photodiode. The various devices have been characterized and analysed.
|Original language||English (US)|
|Number of pages||6|
|Journal||Le Vide, les couches minces|
|State||Published - Nov 1 1987|
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