DESIGN AND REALIZATION OF A GaAs FET INTEGRATED WITH A HETEROJUNCTION PHOTODIODE.

F. Therez, M. T. Belaroussi, Mahmoud Fallahi, D. Kendil

Research output: Contribution to journalArticle

Abstract

Integrated receivers associating an amplifier with a photodiode increases the detector sensitivity. During this work, we have designed and characterized the FET amplifier. The field-effect transistor JFET has been fabricated on a GaAs semi-insulating substrate using liquid phase epitaxy. The structure involved two epitaxial layers of n-GaAs for the channel and GaAlAs for the gate. The design, the technology process and the current-voltage characteristics are described. A transconductance values over 10 mA/V has been achieved and the transistor have shown a threshold voltage of 4. 6 V. The previous results will be applied to two kinds of structures: FET devices without the detector and for the amplifier integrating the photodiode. The various devices have been characterized and analysed.

Original languageEnglish (US)
Pages (from-to)479-484
Number of pages6
JournalLe Vide, les couches minces
Volume42
Issue number239
StatePublished - Nov 1987
Externally publishedYes

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Field effect transistors
Photodiodes
Heterojunctions
Detectors
Junction gate field effect transistors
Liquid phase epitaxy
Epitaxial layers
Transconductance
Current voltage characteristics
Threshold voltage
Transistors
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

DESIGN AND REALIZATION OF A GaAs FET INTEGRATED WITH A HETEROJUNCTION PHOTODIODE. / Therez, F.; Belaroussi, M. T.; Fallahi, Mahmoud; Kendil, D.

In: Le Vide, les couches minces, Vol. 42, No. 239, 11.1987, p. 479-484.

Research output: Contribution to journalArticle

Therez, F, Belaroussi, MT, Fallahi, M & Kendil, D 1987, 'DESIGN AND REALIZATION OF A GaAs FET INTEGRATED WITH A HETEROJUNCTION PHOTODIODE.', Le Vide, les couches minces, vol. 42, no. 239, pp. 479-484.
Therez, F. ; Belaroussi, M. T. ; Fallahi, Mahmoud ; Kendil, D. / DESIGN AND REALIZATION OF A GaAs FET INTEGRATED WITH A HETEROJUNCTION PHOTODIODE. In: Le Vide, les couches minces. 1987 ; Vol. 42, No. 239. pp. 479-484.
@article{41f1e28a199b4c29b66aea3fe5f179aa,
title = "DESIGN AND REALIZATION OF A GaAs FET INTEGRATED WITH A HETEROJUNCTION PHOTODIODE.",
abstract = "Integrated receivers associating an amplifier with a photodiode increases the detector sensitivity. During this work, we have designed and characterized the FET amplifier. The field-effect transistor JFET has been fabricated on a GaAs semi-insulating substrate using liquid phase epitaxy. The structure involved two epitaxial layers of n-GaAs for the channel and GaAlAs for the gate. The design, the technology process and the current-voltage characteristics are described. A transconductance values over 10 mA/V has been achieved and the transistor have shown a threshold voltage of 4. 6 V. The previous results will be applied to two kinds of structures: FET devices without the detector and for the amplifier integrating the photodiode. The various devices have been characterized and analysed.",
author = "F. Therez and Belaroussi, {M. T.} and Mahmoud Fallahi and D. Kendil",
year = "1987",
month = "11",
language = "English (US)",
volume = "42",
pages = "479--484",
journal = "Vide, les Couches Minces",
issn = "0223-4335",
publisher = "Societe Francaise du Vide",
number = "239",

}

TY - JOUR

T1 - DESIGN AND REALIZATION OF A GaAs FET INTEGRATED WITH A HETEROJUNCTION PHOTODIODE.

AU - Therez, F.

AU - Belaroussi, M. T.

AU - Fallahi, Mahmoud

AU - Kendil, D.

PY - 1987/11

Y1 - 1987/11

N2 - Integrated receivers associating an amplifier with a photodiode increases the detector sensitivity. During this work, we have designed and characterized the FET amplifier. The field-effect transistor JFET has been fabricated on a GaAs semi-insulating substrate using liquid phase epitaxy. The structure involved two epitaxial layers of n-GaAs for the channel and GaAlAs for the gate. The design, the technology process and the current-voltage characteristics are described. A transconductance values over 10 mA/V has been achieved and the transistor have shown a threshold voltage of 4. 6 V. The previous results will be applied to two kinds of structures: FET devices without the detector and for the amplifier integrating the photodiode. The various devices have been characterized and analysed.

AB - Integrated receivers associating an amplifier with a photodiode increases the detector sensitivity. During this work, we have designed and characterized the FET amplifier. The field-effect transistor JFET has been fabricated on a GaAs semi-insulating substrate using liquid phase epitaxy. The structure involved two epitaxial layers of n-GaAs for the channel and GaAlAs for the gate. The design, the technology process and the current-voltage characteristics are described. A transconductance values over 10 mA/V has been achieved and the transistor have shown a threshold voltage of 4. 6 V. The previous results will be applied to two kinds of structures: FET devices without the detector and for the amplifier integrating the photodiode. The various devices have been characterized and analysed.

UR - http://www.scopus.com/inward/record.url?scp=0023452179&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023452179&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0023452179

VL - 42

SP - 479

EP - 484

JO - Vide, les Couches Minces

JF - Vide, les Couches Minces

SN - 0223-4335

IS - 239

ER -