Design of the stressed Ge: Ga far-infrared array for SIRTF

Richard Schnurr, Craig L. Thompson, James T. Davis, Jeffrey W. Beeman, James Cadien, Erick T. Young, Eugene E. Haller, George H. Rieke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

Stressed Ge:Ga is currently the most suitable detector type for very low background operation in the 115 to 200 micrometers range. Nonetheless, substantial advances have been required to develop stressed Ge:Ga detectors that work at the background limit in SIRTF. Both dark current and read noise have been improved significantly for the SIRTF devices. The design also takes account of space flight requirements such as the necessity to anneal the focal plane thermally using a minimum of cryogenic power dissipation, and the desire that any failures not propagate through an entire focal plane. The SIRTF 2 X 20 pixel focal plane will have dark current of about 200 e/s, read noise of 100 e rms, and responsivity > 7 A/W. As a result, even in the darkest parts of the sky, it will reach the background limit in less than 4 seconds of integration.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages322-331
Number of pages10
Volume3354
DOIs
StatePublished - 1998
EventInfrared Astronomical Instrumentation - Kona, HI, United States
Duration: Mar 23 1998Mar 23 1998

Other

OtherInfrared Astronomical Instrumentation
CountryUnited States
CityKona, HI
Period3/23/983/23/98

Fingerprint

Space Infrared Telescope Facility
Dark currents
Focal Plane
Dark Current
Infrared
dark current
Infrared radiation
Detectors
Space flight
Detector
Cryogenics
Energy dissipation
Responsivity
space flight
Pixels
detectors
cryogenics
sky
micrometers
Dissipation

Keywords

  • Detectors
  • Infrared
  • MIPS
  • SIRTF

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Schnurr, R., Thompson, C. L., Davis, J. T., Beeman, J. W., Cadien, J., Young, E. T., ... Rieke, G. H. (1998). Design of the stressed Ge: Ga far-infrared array for SIRTF. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3354, pp. 322-331) https://doi.org/10.1117/12.317318

Design of the stressed Ge : Ga far-infrared array for SIRTF. / Schnurr, Richard; Thompson, Craig L.; Davis, James T.; Beeman, Jeffrey W.; Cadien, James; Young, Erick T.; Haller, Eugene E.; Rieke, George H.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3354 1998. p. 322-331.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Schnurr, R, Thompson, CL, Davis, JT, Beeman, JW, Cadien, J, Young, ET, Haller, EE & Rieke, GH 1998, Design of the stressed Ge: Ga far-infrared array for SIRTF. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3354, pp. 322-331, Infrared Astronomical Instrumentation, Kona, HI, United States, 3/23/98. https://doi.org/10.1117/12.317318
Schnurr R, Thompson CL, Davis JT, Beeman JW, Cadien J, Young ET et al. Design of the stressed Ge: Ga far-infrared array for SIRTF. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3354. 1998. p. 322-331 https://doi.org/10.1117/12.317318
Schnurr, Richard ; Thompson, Craig L. ; Davis, James T. ; Beeman, Jeffrey W. ; Cadien, James ; Young, Erick T. ; Haller, Eugene E. ; Rieke, George H. / Design of the stressed Ge : Ga far-infrared array for SIRTF. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3354 1998. pp. 322-331
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