Detecting the major charge-carrier scattering mechanism in graphene antidot lattices

Dongchao Xu, Shuang Tang, Xu Du, Qing Hao

Research output: Contribution to journalArticle

Abstract

Charge carrier scattering is critical to the electrical properties of two-dimensional materials such as graphene, black phosphorene, and tellurene. Beyond pristine two-dimensional materials, further tailored properties can be achieved by nanoporous patterns such as nano- or atomic-scale pores (antidots) across the material. As one example, structure-dependent electrical/optical properties for graphene antidot lattices (GALs) have been studied in recent years. However, detailed charge carrier scattering mechanism is still not fully understood. In this paper, the energy sensitivity of charge-carrier scattering and thus the dominant scattering mechanisms are revealed for GALs by analyzing the maximum Seebeck coefficient with a tuned gate voltage and thus shifted Fermi levels. It shows that the scattering from pore-edge-trapped charges is dominant. For thermoelectric interests, the gate-voltage-dependent power factor for a GAL with the square pattern can reach as high as 554 μW/cm⋅K2 at 400 K. With their high thermal conductivities and power factors, these GALs can be well suitable for “active coolers” within electronic devices, where heat generated at the hot spot can be removed with both passive heat conduction and active Peltier cooling.

Original languageEnglish (US)
Pages (from-to)601-607
Number of pages7
JournalCarbon
Volume144
DOIs
StatePublished - Apr 1 2019

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Charge carriers
Crystal lattices
Graphene
Scattering
Seebeck coefficient
Electric potential
Fermi level
Heat conduction
Thermal conductivity
Electric properties
Optical properties
Cooling

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this

Detecting the major charge-carrier scattering mechanism in graphene antidot lattices. / Xu, Dongchao; Tang, Shuang; Du, Xu; Hao, Qing.

In: Carbon, Vol. 144, 01.04.2019, p. 601-607.

Research output: Contribution to journalArticle

Xu, Dongchao ; Tang, Shuang ; Du, Xu ; Hao, Qing. / Detecting the major charge-carrier scattering mechanism in graphene antidot lattices. In: Carbon. 2019 ; Vol. 144. pp. 601-607.
@article{38d979876f9b4e0a869b338df9eeffa8,
title = "Detecting the major charge-carrier scattering mechanism in graphene antidot lattices",
abstract = "Charge carrier scattering is critical to the electrical properties of two-dimensional materials such as graphene, black phosphorene, and tellurene. Beyond pristine two-dimensional materials, further tailored properties can be achieved by nanoporous patterns such as nano- or atomic-scale pores (antidots) across the material. As one example, structure-dependent electrical/optical properties for graphene antidot lattices (GALs) have been studied in recent years. However, detailed charge carrier scattering mechanism is still not fully understood. In this paper, the energy sensitivity of charge-carrier scattering and thus the dominant scattering mechanisms are revealed for GALs by analyzing the maximum Seebeck coefficient with a tuned gate voltage and thus shifted Fermi levels. It shows that the scattering from pore-edge-trapped charges is dominant. For thermoelectric interests, the gate-voltage-dependent power factor for a GAL with the square pattern can reach as high as 554 μW/cm⋅K2 at 400 K. With their high thermal conductivities and power factors, these GALs can be well suitable for “active coolers” within electronic devices, where heat generated at the hot spot can be removed with both passive heat conduction and active Peltier cooling.",
author = "Dongchao Xu and Shuang Tang and Xu Du and Qing Hao",
year = "2019",
month = "4",
day = "1",
doi = "10.1016/j.carbon.2018.12.080",
language = "English (US)",
volume = "144",
pages = "601--607",
journal = "Carbon",
issn = "0008-6223",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Detecting the major charge-carrier scattering mechanism in graphene antidot lattices

AU - Xu, Dongchao

AU - Tang, Shuang

AU - Du, Xu

AU - Hao, Qing

PY - 2019/4/1

Y1 - 2019/4/1

N2 - Charge carrier scattering is critical to the electrical properties of two-dimensional materials such as graphene, black phosphorene, and tellurene. Beyond pristine two-dimensional materials, further tailored properties can be achieved by nanoporous patterns such as nano- or atomic-scale pores (antidots) across the material. As one example, structure-dependent electrical/optical properties for graphene antidot lattices (GALs) have been studied in recent years. However, detailed charge carrier scattering mechanism is still not fully understood. In this paper, the energy sensitivity of charge-carrier scattering and thus the dominant scattering mechanisms are revealed for GALs by analyzing the maximum Seebeck coefficient with a tuned gate voltage and thus shifted Fermi levels. It shows that the scattering from pore-edge-trapped charges is dominant. For thermoelectric interests, the gate-voltage-dependent power factor for a GAL with the square pattern can reach as high as 554 μW/cm⋅K2 at 400 K. With their high thermal conductivities and power factors, these GALs can be well suitable for “active coolers” within electronic devices, where heat generated at the hot spot can be removed with both passive heat conduction and active Peltier cooling.

AB - Charge carrier scattering is critical to the electrical properties of two-dimensional materials such as graphene, black phosphorene, and tellurene. Beyond pristine two-dimensional materials, further tailored properties can be achieved by nanoporous patterns such as nano- or atomic-scale pores (antidots) across the material. As one example, structure-dependent electrical/optical properties for graphene antidot lattices (GALs) have been studied in recent years. However, detailed charge carrier scattering mechanism is still not fully understood. In this paper, the energy sensitivity of charge-carrier scattering and thus the dominant scattering mechanisms are revealed for GALs by analyzing the maximum Seebeck coefficient with a tuned gate voltage and thus shifted Fermi levels. It shows that the scattering from pore-edge-trapped charges is dominant. For thermoelectric interests, the gate-voltage-dependent power factor for a GAL with the square pattern can reach as high as 554 μW/cm⋅K2 at 400 K. With their high thermal conductivities and power factors, these GALs can be well suitable for “active coolers” within electronic devices, where heat generated at the hot spot can be removed with both passive heat conduction and active Peltier cooling.

UR - http://www.scopus.com/inward/record.url?scp=85059486860&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059486860&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2018.12.080

DO - 10.1016/j.carbon.2018.12.080

M3 - Article

VL - 144

SP - 601

EP - 607

JO - Carbon

JF - Carbon

SN - 0008-6223

ER -