Detection of semiconductor dopants using accelerator mass spectrometry

J. M. Anthony, D. J. Donahue, A.J. Timothy Jull, T. H. Zabel

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We have used the tandem accelerator mass spectrometer at the University of Arizona to detect dopants and other impurities in Si and GaAs. B, P, As and Sb doped Si crystals have been examined, with detection limits ranging from ~ 0.5 ppb (parts-per-billion) for B to ~10 ppb for P and Sb. B and Cr doped GaAs have also been examined, with detection limits of ~ 0.5 and 40 ppb, respectively. The terminal voltage for these experiments was 1.8 MV, and a post-acceleration carbon stripper foil ( ~ 350 Å) was used to lower the magnetic rigidity of heavy ions before entering the analyzing magnets.

Original languageEnglish (US)
Pages (from-to)498-500
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume10-11
Issue numberPART 1
DOIs
StatePublished - May 15 1985

Fingerprint

Mass spectrometers
Heavy ions
Rigidity
Metal foil
Particle accelerators
Magnets
Mass spectrometry
accelerators
mass spectroscopy
magnetic rigidity
Doping (additives)
Impurities
Semiconductor materials
Heavy Ions
Crystals
Carbon
Electric potential
doped crystals
mass spectrometers
foils

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Detection of semiconductor dopants using accelerator mass spectrometry. / Anthony, J. M.; Donahue, D. J.; Jull, A.J. Timothy; Zabel, T. H.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 10-11, No. PART 1, 15.05.1985, p. 498-500.

Research output: Contribution to journalArticle

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