Determining the effect of slurry flow rate on the tribological, thermal and removal rate attributes of copper CMP

Z. Li, L. Borucki, Ara Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Chemical mechanical polishing of copper using is examined experimentally and theoretically as a function of slurry flow rate and the product of the applied wafer pressure and relative sliding speed (pV), It is observed that under constant tribological conditions, the removal rate at any fixed value of pV generally decreases as the slurry flow rate increases. This is explained as a reduction in reaction rate due to increased cooling of the wafer surface by the slurry. At a fixed flow rate, it is further observed that the removal rate does not necessarily increase monotonically with pV. The rate may instead depend on the particular pressure and velocity chosen at a fixed value of their product, The dependence occurs through the coefficient for convective heat transfer between the wafer and the slurry, and the heat partition factor, which determines the fraction of the total factional power that heats the wafer. Rates are found to be explainable with a Lagmuir-Hinschelwood model with mechanical and chemical components.

Original languageEnglish (US)
Title of host publicationProceedings - Electrochemical Society
EditorsS. Seal, R.L. Opila, K.B. Sundaram, R. Singh
Pages104-114
Number of pages11
Volume21
StatePublished - 2003
EventChemical Mechanical Planarization VI - Proceddings of the International Symposium - Orlando, FL., United States
Duration: Oct 12 2003Oct 17 2003

Other

OtherChemical Mechanical Planarization VI - Proceddings of the International Symposium
CountryUnited States
CityOrlando, FL.
Period10/12/0310/17/03

Fingerprint

Flow rate
Copper
Chemical mechanical polishing
Reaction rates
Heat transfer
Cooling
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Li, Z., Borucki, L., & Philipossian, A. (2003). Determining the effect of slurry flow rate on the tribological, thermal and removal rate attributes of copper CMP. In S. Seal, R. L. Opila, K. B. Sundaram, & R. Singh (Eds.), Proceedings - Electrochemical Society (Vol. 21, pp. 104-114)

Determining the effect of slurry flow rate on the tribological, thermal and removal rate attributes of copper CMP. / Li, Z.; Borucki, L.; Philipossian, Ara.

Proceedings - Electrochemical Society. ed. / S. Seal; R.L. Opila; K.B. Sundaram; R. Singh. Vol. 21 2003. p. 104-114.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, Z, Borucki, L & Philipossian, A 2003, Determining the effect of slurry flow rate on the tribological, thermal and removal rate attributes of copper CMP. in S Seal, RL Opila, KB Sundaram & R Singh (eds), Proceedings - Electrochemical Society. vol. 21, pp. 104-114, Chemical Mechanical Planarization VI - Proceddings of the International Symposium, Orlando, FL., United States, 10/12/03.
Li Z, Borucki L, Philipossian A. Determining the effect of slurry flow rate on the tribological, thermal and removal rate attributes of copper CMP. In Seal S, Opila RL, Sundaram KB, Singh R, editors, Proceedings - Electrochemical Society. Vol. 21. 2003. p. 104-114
Li, Z. ; Borucki, L. ; Philipossian, Ara. / Determining the effect of slurry flow rate on the tribological, thermal and removal rate attributes of copper CMP. Proceedings - Electrochemical Society. editor / S. Seal ; R.L. Opila ; K.B. Sundaram ; R. Singh. Vol. 21 2003. pp. 104-114
@inproceedings{a1d5255201744b988b4bd570ebdd363e,
title = "Determining the effect of slurry flow rate on the tribological, thermal and removal rate attributes of copper CMP",
abstract = "Chemical mechanical polishing of copper using is examined experimentally and theoretically as a function of slurry flow rate and the product of the applied wafer pressure and relative sliding speed (pV), It is observed that under constant tribological conditions, the removal rate at any fixed value of pV generally decreases as the slurry flow rate increases. This is explained as a reduction in reaction rate due to increased cooling of the wafer surface by the slurry. At a fixed flow rate, it is further observed that the removal rate does not necessarily increase monotonically with pV. The rate may instead depend on the particular pressure and velocity chosen at a fixed value of their product, The dependence occurs through the coefficient for convective heat transfer between the wafer and the slurry, and the heat partition factor, which determines the fraction of the total factional power that heats the wafer. Rates are found to be explainable with a Lagmuir-Hinschelwood model with mechanical and chemical components.",
author = "Z. Li and L. Borucki and Ara Philipossian",
year = "2003",
language = "English (US)",
volume = "21",
pages = "104--114",
editor = "S. Seal and R.L. Opila and K.B. Sundaram and R. Singh",
booktitle = "Proceedings - Electrochemical Society",

}

TY - GEN

T1 - Determining the effect of slurry flow rate on the tribological, thermal and removal rate attributes of copper CMP

AU - Li, Z.

AU - Borucki, L.

AU - Philipossian, Ara

PY - 2003

Y1 - 2003

N2 - Chemical mechanical polishing of copper using is examined experimentally and theoretically as a function of slurry flow rate and the product of the applied wafer pressure and relative sliding speed (pV), It is observed that under constant tribological conditions, the removal rate at any fixed value of pV generally decreases as the slurry flow rate increases. This is explained as a reduction in reaction rate due to increased cooling of the wafer surface by the slurry. At a fixed flow rate, it is further observed that the removal rate does not necessarily increase monotonically with pV. The rate may instead depend on the particular pressure and velocity chosen at a fixed value of their product, The dependence occurs through the coefficient for convective heat transfer between the wafer and the slurry, and the heat partition factor, which determines the fraction of the total factional power that heats the wafer. Rates are found to be explainable with a Lagmuir-Hinschelwood model with mechanical and chemical components.

AB - Chemical mechanical polishing of copper using is examined experimentally and theoretically as a function of slurry flow rate and the product of the applied wafer pressure and relative sliding speed (pV), It is observed that under constant tribological conditions, the removal rate at any fixed value of pV generally decreases as the slurry flow rate increases. This is explained as a reduction in reaction rate due to increased cooling of the wafer surface by the slurry. At a fixed flow rate, it is further observed that the removal rate does not necessarily increase monotonically with pV. The rate may instead depend on the particular pressure and velocity chosen at a fixed value of their product, The dependence occurs through the coefficient for convective heat transfer between the wafer and the slurry, and the heat partition factor, which determines the fraction of the total factional power that heats the wafer. Rates are found to be explainable with a Lagmuir-Hinschelwood model with mechanical and chemical components.

UR - http://www.scopus.com/inward/record.url?scp=3042763201&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042763201&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:3042763201

VL - 21

SP - 104

EP - 114

BT - Proceedings - Electrochemical Society

A2 - Seal, S.

A2 - Opila, R.L.

A2 - Sundaram, K.B.

A2 - Singh, R.

ER -