Determining the fundamental kinetic parameters for rinsing and cleaning of hafnium-based high-k materials

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The interactions of HF with hafnium oxide are important during post-etch cleaning of high-k dielectrics. The dynamics of these interactions during the rinse process are studied using a quartz crystal microbalance (QCM) equipped with a flow-through cell. A process model is developed showing that the overall process consists of three simultaneous process steps: adsorption, desorption and etching involving fluoride species. The model was validated using the experimental data obtained in QCM. The key parameters of these process steps namely adsorption, desorption and etch rate coefficients were determined using the combined experimental measurement and process modeling.

Original languageEnglish (US)
Title of host publicationSemiconductor Cleaning Science and Technology 12, SCST 12
Pages45-50
Number of pages6
Edition5
DOIs
StatePublished - Dec 1 2011
Event12th International Symposium on Semiconductor Cleaning Science and Technology, SCST12 - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 10 2011Oct 11 2011

Publication series

NameECS Transactions
Number5
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other12th International Symposium on Semiconductor Cleaning Science and Technology, SCST12 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/10/1110/11/11

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Zamani, D., Keswani, M., Yan, J., Raghavan, S., & Shadman, F. (2011). Determining the fundamental kinetic parameters for rinsing and cleaning of hafnium-based high-k materials. In Semiconductor Cleaning Science and Technology 12, SCST 12 (5 ed., pp. 45-50). (ECS Transactions; Vol. 41, No. 5). https://doi.org/10.1149/1.3630825