Determining the wafer temperature in atmospheric thermal silicon oxidation reactors

Ara Philipossian, H. R. Soleimani

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

It has been shown that, in ultrathin gate oxidation processes, temperature ramp-up in atmospheric thermal silicon oxidation reactors subjects the wafers to severe temperature nonuniformities. The extent of this nonuniformity has been determined via a method based on the principle that for a given type of silicon substrate, in the absence of nonuniform oxygen partial pressure distributions, the oxidation rate of silicon depends only on substrate temperature. By experimentally determining within-wafer and wafer-to-wafer SiO2 growth rate variabilities, and by using an SiO2 growth rate computer simulation model, substrate temperature has been determined.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume142
Issue number5
StatePublished - May 1995
Externally publishedYes

Fingerprint

Silicon
reactors
wafers
Oxidation
oxidation
silicon
nonuniformity
Substrates
Temperature
temperature
ramps
pressure distribution
Pressure distribution
Partial pressure
partial pressure
computerized simulation
Oxygen
Hot Temperature
Computer simulation
oxygen

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Determining the wafer temperature in atmospheric thermal silicon oxidation reactors. / Philipossian, Ara; Soleimani, H. R.

In: Journal of the Electrochemical Society, Vol. 142, No. 5, 05.1995.

Research output: Contribution to journalArticle

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