Determining the Wafer Temperature in Atmospheric Thermal Silicon Oxidation Reactors

A. Philipossian, H. R. Soleimani

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

It has been shown that, in ultrathin gate oxidation processes, temperature ramp-up in atmospheric thermal silicon oxidation reactors subjects the wafers to severe temperature nonuniformities. The extent of this nonuniformity has been determined via a method based on the principle that for a given type of silicon substrate, in the absence of nonuniform oxygen partial pressure distributions, the oxidation rate of silicon depends only on substrate temperature. By experimentally determining within-wafer and wafer-to-wafer SiO2growth rate variabilities, and by using an SiO2growth rate computer simulation model, substrate temperature has been determined.

Original languageEnglish (US)
Pages (from-to)L67-L69
JournalJournal of the Electrochemical Society
Volume142
Issue number5
DOIs
StatePublished - Apr 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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