Dielectric and ferroelectric properties of sol-gel derived PLZT films

G. Teowee, E. L. Quackenbush, C. D. Baertlein, J. M. Boulton, E. A. Kneer, D. R. Uhlmann

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

There has not been much exploration of PLZT film properties as a function of composition reported in the literature. A survey of numerous PLZT films covering a wide spectrum of the PLZT phase diagram was undertaken to explore the dependence of film properties on composition. A series of sol-gel derived PLZT films were prepared on platinized Si wafers and fired to 700 C to obtain the perovskite phase. The film compositions include PLZT x/65/35, x/20/80, x/53/47 for x = 0, 2, 4, 6, 8, 10 and 12 and 7.5/x/y where x/y = 70/30, 53/47, 20/80 and 0/100. These films were characterized for their dielectric and ferroelectric properties. The films definitely showed a strong dependence of final film properties on composition, providing a valuable tool for the material engineering of ferroelectric film properties.

Original languageEnglish (US)
Pages (from-to)433-438
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume361
StatePublished - Jan 1 1995
Externally publishedYes
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Nov 30 1994

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Dielectric and ferroelectric properties of sol-gel derived PLZT films'. Together they form a unique fingerprint.

Cite this