Dielectric and Ferroelectric Properties of Sol-Gel Derived YMnO3 Films

G. Teowee, K. C. McCarthy, F. S. McCarthy, T. J. Bukowski, D. G. Davis, Donald R Uhlmann

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

There has been considerable interest in ferroelectric (FE) films especially for non-volatile memories and ultra high density DRAM applications. Such FE films typically consist of lead zirconate titanate (PZT) with novel oxide contacts, or layered perovskite such as Sr2Bi2TaO9. Recently, there have been reports of sputtered YMnO3 films which exhibit a single polarization axis and do not contain any volatile species of Pb or Bi. Single crystal YMnO3 exhibits satisfactory polarization (6 γC/cm2) and low coercive field (<20 kV/cm). Additionally, the dielectric constant of YMnO3 is quite low (<30) which should facilitate ferroelectric switching. In this study, sol-gel derived YMnO3 films were prepared on platinized Si wafers and their dielectric and ferroelectric properties were characterized. Their electrical properties will be discussed with respect to Y/Mn stoichiometry ratio, hexagonal phase development and processing conditions. The potential of YMnO3 as a material in non-volatile memories is evaluated.

Original languageEnglish (US)
Pages (from-to)899-902
Number of pages4
JournalJournal of Sol-Gel Science and Technology
Volume13
Issue number1-3
StatePublished - 1999

Fingerprint

Ferroelectric films
Ferroelectric materials
Sol-gels
dielectric properties
gels
Polarization
Data storage equipment
Dynamic random access storage
Stoichiometry
Perovskite
Oxides
Electric properties
Permittivity
Single crystals
polarization
Processing
stoichiometry
electrical properties
wafers
permittivity

Keywords

  • Dielectric
  • Ferroelectric
  • Films
  • Yttrium manganate

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Teowee, G., McCarthy, K. C., McCarthy, F. S., Bukowski, T. J., Davis, D. G., & Uhlmann, D. R. (1999). Dielectric and Ferroelectric Properties of Sol-Gel Derived YMnO3 Films. Journal of Sol-Gel Science and Technology, 13(1-3), 899-902.

Dielectric and Ferroelectric Properties of Sol-Gel Derived YMnO3 Films. / Teowee, G.; McCarthy, K. C.; McCarthy, F. S.; Bukowski, T. J.; Davis, D. G.; Uhlmann, Donald R.

In: Journal of Sol-Gel Science and Technology, Vol. 13, No. 1-3, 1999, p. 899-902.

Research output: Contribution to journalArticle

Teowee, G, McCarthy, KC, McCarthy, FS, Bukowski, TJ, Davis, DG & Uhlmann, DR 1999, 'Dielectric and Ferroelectric Properties of Sol-Gel Derived YMnO3 Films', Journal of Sol-Gel Science and Technology, vol. 13, no. 1-3, pp. 899-902.
Teowee G, McCarthy KC, McCarthy FS, Bukowski TJ, Davis DG, Uhlmann DR. Dielectric and Ferroelectric Properties of Sol-Gel Derived YMnO3 Films. Journal of Sol-Gel Science and Technology. 1999;13(1-3):899-902.
Teowee, G. ; McCarthy, K. C. ; McCarthy, F. S. ; Bukowski, T. J. ; Davis, D. G. ; Uhlmann, Donald R. / Dielectric and Ferroelectric Properties of Sol-Gel Derived YMnO3 Films. In: Journal of Sol-Gel Science and Technology. 1999 ; Vol. 13, No. 1-3. pp. 899-902.
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