Dielectric breakdown of single-crystal strontium titanate

Research output: Research - peer-reviewArticle

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Abstract

Measurements of the intrinsic dielectric breakdown strength of single-crystal strontium titanate over a temperature range from -195°to +100°C and under both pulse and dc conditions are described; dc breakdown at +100°C is thermal in origin. At room temperature and at -40°C the breakdown strength is independent of duration of applied field and of sample configuration and hence may properly be termed intrinsic. At -80°and -195°C, both the values of breakdown strength and the scatter of the data depend strongly on sample configuration. The breakdown strength unexpectedly decreases with increasing temperature. Current-voltage curves show an anomalous saturation effect at low temperature. These effects may be qualitatively explained by postulating that the high electrostrictive stress causes the creation of electron trapping centers.

LanguageEnglish (US)
Pages1420-1425
Number of pages6
JournalJournal of Applied Physics
Volume35
Issue number5
DOIs
StatePublished - 1964
Externally publishedYes

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strontium
breakdown
single crystals
configurations
temperature
trapping
saturation
causes
electric potential
room temperature
curves
pulses
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Dielectric breakdown of single-crystal strontium titanate. / Barrett, Harrison H.

In: Journal of Applied Physics, Vol. 35, No. 5, 1964, p. 1420-1425.

Research output: Research - peer-reviewArticle

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AB - Measurements of the intrinsic dielectric breakdown strength of single-crystal strontium titanate over a temperature range from -195°to +100°C and under both pulse and dc conditions are described; dc breakdown at +100°C is thermal in origin. At room temperature and at -40°C the breakdown strength is independent of duration of applied field and of sample configuration and hence may properly be termed intrinsic. At -80°and -195°C, both the values of breakdown strength and the scatter of the data depend strongly on sample configuration. The breakdown strength unexpectedly decreases with increasing temperature. Current-voltage curves show an anomalous saturation effect at low temperature. These effects may be qualitatively explained by postulating that the high electrostrictive stress causes the creation of electron trapping centers.

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