Dielectric characterization of sol-gel derived Sn doped ZrTiO4 thin films

T. P. Alexander, Donald R Uhlmann, G. Teowee, K. McCarthy, F. McCarthy, T. J. Bukowski

Research output: Chapter in Book/Report/Conference proceedingChapter

10 Citations (Scopus)

Abstract

High-quality thin film dielectric materials are critical for the next generation of integrated microwave devices. Much recent attention has been focused on ZrTiO4 and Sn doped ZrTiO4 films for applications in these devices. Sol-gel derived Sn doped ZrTiO4 thin films were prepared on Si and platinized Si wafers and fired to temperatures ranging from 550°C to 700°C. Multiple spincoating was performed to obtain films up to 0.5μm thick, with intermediate firings at 400°C between coatings. The ZrTiO4 films exhibited a dielectric constant of about 32 with low leakage currents of 2×10-9 A. These films were crystalline when fired to 700°C or above. The addition of Sn lowered the dielectric constant but also improved the dissipation factor.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
Pages221-230
Number of pages10
Volume17
Edition1-4
StatePublished - 1997

Fingerprint

Sol-gels
gels
Thin films
thin films
Permittivity
permittivity
Microwave devices
Leakage currents
leakage
dissipation
wafers
Crystalline materials
coatings
microwaves
Coatings
Temperature
temperature

Keywords

  • Dielectric constant
  • Dissipation factor
  • Sol-gel
  • ZrTiO thin films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Alexander, T. P., Uhlmann, D. R., Teowee, G., McCarthy, K., McCarthy, F., & Bukowski, T. J. (1997). Dielectric characterization of sol-gel derived Sn doped ZrTiO4 thin films. In Integrated Ferroelectrics (1-4 ed., Vol. 17, pp. 221-230)

Dielectric characterization of sol-gel derived Sn doped ZrTiO4 thin films. / Alexander, T. P.; Uhlmann, Donald R; Teowee, G.; McCarthy, K.; McCarthy, F.; Bukowski, T. J.

Integrated Ferroelectrics. Vol. 17 1-4. ed. 1997. p. 221-230.

Research output: Chapter in Book/Report/Conference proceedingChapter

Alexander, TP, Uhlmann, DR, Teowee, G, McCarthy, K, McCarthy, F & Bukowski, TJ 1997, Dielectric characterization of sol-gel derived Sn doped ZrTiO4 thin films. in Integrated Ferroelectrics. 1-4 edn, vol. 17, pp. 221-230.
Alexander TP, Uhlmann DR, Teowee G, McCarthy K, McCarthy F, Bukowski TJ. Dielectric characterization of sol-gel derived Sn doped ZrTiO4 thin films. In Integrated Ferroelectrics. 1-4 ed. Vol. 17. 1997. p. 221-230
Alexander, T. P. ; Uhlmann, Donald R ; Teowee, G. ; McCarthy, K. ; McCarthy, F. ; Bukowski, T. J. / Dielectric characterization of sol-gel derived Sn doped ZrTiO4 thin films. Integrated Ferroelectrics. Vol. 17 1-4. ed. 1997. pp. 221-230
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