Dielectric properties of sol-gel derived ZnO thin films

T. P. Alexander, T. J. Bukowski, G. Teowee, D. R. Uhlmann, K. C. McCarthy, J. Dawley, B. J.J. Zelinski

Research output: Contribution to conferencePaper

12 Scopus citations

Abstract

Sol-gel derived ZnO thin films were prepared on platinized Si wafers and fired to temperatures ranging from 550C to 700C. Multiple spincoating was performed with an intermediate firing at 400C between coatings to obtain films up to 6000 A thick. Top Pt electrodes were sputtered to form monolithic capacitors. Dielectric characterization indicated dielectric constants as large as 24, twice the highest value reported previously. The leakage currents decreased with increasing firing temperature. XRD indicated that the films consisted of crystalline wurtzite films at firing temperatures as low as 400C and that the c-axis orientation increased with increasing firing temperature. Piezoelectric characterization indicated d33 values as large as 17 pm/V, which is larger than any previously reported value for ZnO films.

Original languageEnglish (US)
Pages585-588
Number of pages4
StatePublished - Dec 1 1996
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period8/18/968/21/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Dielectric properties of sol-gel derived ZnO thin films'. Together they form a unique fingerprint.

  • Cite this

    Alexander, T. P., Bukowski, T. J., Teowee, G., Uhlmann, D. R., McCarthy, K. C., Dawley, J., & Zelinski, B. J. J. (1996). Dielectric properties of sol-gel derived ZnO thin films. 585-588. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .