Dielectric relaxation in ferroelectrics

Donald R Uhlmann, G. Teowee, J. M. Boulton

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Ferroelectrics are important multifunctional materials with applications ranging from high Er capacitors to non-volatile memory devices. Dielectric relaxation studies of ferroelectrics help elucidate the various mechanisms responsible for polarization. These insights are beneficial for materials engineering and tailoring of specific properties. In the present review, a comparison among the paraelectric, ferroelectric and physical states of the material are made. Compositional and dopant effects are also addressed. In ferroelectrics, the domain structure is shown to play a crucial role in determining both the nature and mechanism of the dielectric relaxation in the microwave region. At lower frequencies interfacial polarization dominates, especially for polycrystalline samples.

Original languageEnglish (US)
Pages (from-to)1194-1201
Number of pages8
JournalJournal of Non-Crystalline Solids
Volume131-133
Issue numberPART 2
DOIs
StatePublished - Jun 2 1991

Fingerprint

Dielectric relaxation
Ferroelectric materials
polarization
capacitors
engineering
Polarization
low frequencies
microwaves
Capacitors
Microwaves
Doping (additives)
Data storage equipment

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Dielectric relaxation in ferroelectrics. / Uhlmann, Donald R; Teowee, G.; Boulton, J. M.

In: Journal of Non-Crystalline Solids, Vol. 131-133, No. PART 2, 02.06.1991, p. 1194-1201.

Research output: Contribution to journalArticle

Uhlmann, Donald R ; Teowee, G. ; Boulton, J. M. / Dielectric relaxation in ferroelectrics. In: Journal of Non-Crystalline Solids. 1991 ; Vol. 131-133, No. PART 2. pp. 1194-1201.
@article{2e555887d968405e9c21297e55b0bdde,
title = "Dielectric relaxation in ferroelectrics",
abstract = "Ferroelectrics are important multifunctional materials with applications ranging from high Er capacitors to non-volatile memory devices. Dielectric relaxation studies of ferroelectrics help elucidate the various mechanisms responsible for polarization. These insights are beneficial for materials engineering and tailoring of specific properties. In the present review, a comparison among the paraelectric, ferroelectric and physical states of the material are made. Compositional and dopant effects are also addressed. In ferroelectrics, the domain structure is shown to play a crucial role in determining both the nature and mechanism of the dielectric relaxation in the microwave region. At lower frequencies interfacial polarization dominates, especially for polycrystalline samples.",
author = "Uhlmann, {Donald R} and G. Teowee and Boulton, {J. M.}",
year = "1991",
month = "6",
day = "2",
doi = "10.1016/0022-3093(91)90753-S",
language = "English (US)",
volume = "131-133",
pages = "1194--1201",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",
number = "PART 2",

}

TY - JOUR

T1 - Dielectric relaxation in ferroelectrics

AU - Uhlmann, Donald R

AU - Teowee, G.

AU - Boulton, J. M.

PY - 1991/6/2

Y1 - 1991/6/2

N2 - Ferroelectrics are important multifunctional materials with applications ranging from high Er capacitors to non-volatile memory devices. Dielectric relaxation studies of ferroelectrics help elucidate the various mechanisms responsible for polarization. These insights are beneficial for materials engineering and tailoring of specific properties. In the present review, a comparison among the paraelectric, ferroelectric and physical states of the material are made. Compositional and dopant effects are also addressed. In ferroelectrics, the domain structure is shown to play a crucial role in determining both the nature and mechanism of the dielectric relaxation in the microwave region. At lower frequencies interfacial polarization dominates, especially for polycrystalline samples.

AB - Ferroelectrics are important multifunctional materials with applications ranging from high Er capacitors to non-volatile memory devices. Dielectric relaxation studies of ferroelectrics help elucidate the various mechanisms responsible for polarization. These insights are beneficial for materials engineering and tailoring of specific properties. In the present review, a comparison among the paraelectric, ferroelectric and physical states of the material are made. Compositional and dopant effects are also addressed. In ferroelectrics, the domain structure is shown to play a crucial role in determining both the nature and mechanism of the dielectric relaxation in the microwave region. At lower frequencies interfacial polarization dominates, especially for polycrystalline samples.

UR - http://www.scopus.com/inward/record.url?scp=0026413697&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026413697&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(91)90753-S

DO - 10.1016/0022-3093(91)90753-S

M3 - Article

AN - SCOPUS:0026413697

VL - 131-133

SP - 1194

EP - 1201

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - PART 2

ER -