Dilute HF solutions for copper cleaning during BEOL processes: Effect of aeration on selectivity and copper corrosion

D. P.R. Thanu, N. Venkataraman, S. Raghavan, O. Mahdavi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

Effectiveness of dilute HF based formulations in selectively removing copper oxide (CuOx) films with respect to copper and dielectric films has been investigated. Key solution variables studied include HF concentration, dissolved oxygen level and pH. Improved CuOx/Cu selectivity has been achieved under deaerated conditions. Deaerated solution containing 1000:1 HF (pH3) provides CuOx/Cu selectivity of ∼50:1 and CuO x/low-k dielectric (Carbon Doped Oxide) selectivity of ∼15:1. Conditions under which copper can be passivated during cleaning in dilute HF have been explored using electrochemical polarization studies and Electrochemical Quartz Crystal Microbalance (EQCM).

Original languageEnglish (US)
Title of host publicationECS Transactions - Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11
Pages109-116
Number of pages8
Edition5
DOIs
StatePublished - Dec 1 2009
Event11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting - Vienna, Austria
Duration: Oct 4 2009Oct 9 2009

Publication series

NameECS Transactions
Number5
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting
CountryAustria
CityVienna
Period10/4/0910/9/09

ASJC Scopus subject areas

  • Engineering(all)

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    Thanu, D. P. R., Venkataraman, N., Raghavan, S., & Mahdavi, O. (2009). Dilute HF solutions for copper cleaning during BEOL processes: Effect of aeration on selectivity and copper corrosion. In ECS Transactions - Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11 (5 ed., pp. 109-116). (ECS Transactions; Vol. 25, No. 5). https://doi.org/10.1149/1.3202642