Dipole selection rules in multiband semiconductors

M. Lindberg, R. Binder, Y. Z. Hu, S. W. Koch

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Rigorous dipole selection rules are derived for an interacting electron-hole system in a multiband semiconductor. The electronic system is described by the Coulomb many-body Hamiltonian and the valence-band structure is modeled using the Luttinger Hamiltonian in the axial approximation. For the example of a third-order analysis of polarization dependent two- and three-beam four-wave-mixing experiments the polarizations of the mixing signals are computed. Besides situations with well-defined four-wave-mixing polarizations configurations are identified where the polarization state of the outgoing signal depends on the dynamic and coherent properties of the semiconductor.

Original languageEnglish (US)
Pages (from-to)16942-16952
Number of pages11
JournalPhysical Review B
Volume49
Issue number24
DOIs
StatePublished - Jan 1 1994

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Dipole selection rules in multiband semiconductors'. Together they form a unique fingerprint.

  • Cite this