Dipole selection rules in multiband semiconductors

M. Lindberg, Rudolf Binder, Y. Z. Hu, Stephan W Koch

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Rigorous dipole selection rules are derived for an interacting electron-hole system in a multiband semiconductor. The electronic system is described by the Coulomb many-body Hamiltonian and the valence-band structure is modeled using the Luttinger Hamiltonian in the axial approximation. For the example of a third-order analysis of polarization dependent two- and three-beam four-wave-mixing experiments the polarizations of the mixing signals are computed. Besides situations with well-defined four-wave-mixing polarizations configurations are identified where the polarization state of the outgoing signal depends on the dynamic and coherent properties of the semiconductor.

Original languageEnglish (US)
Pages (from-to)16942-16952
Number of pages11
JournalPhysical Review B
Volume49
Issue number24
DOIs
StatePublished - 1994

Fingerprint

Polarization
Semiconductor materials
dipoles
Hamiltonians
Four wave mixing
polarization
four-wave mixing
signal mixing
Valence bands
Band structure
dynamic characteristics
valence
Electrons
configurations
approximation
electronics
Experiments

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Dipole selection rules in multiband semiconductors. / Lindberg, M.; Binder, Rudolf; Hu, Y. Z.; Koch, Stephan W.

In: Physical Review B, Vol. 49, No. 24, 1994, p. 16942-16952.

Research output: Contribution to journalArticle

Lindberg, M. ; Binder, Rudolf ; Hu, Y. Z. ; Koch, Stephan W. / Dipole selection rules in multiband semiconductors. In: Physical Review B. 1994 ; Vol. 49, No. 24. pp. 16942-16952.
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