Direct interferometric measurements of quantum-confined stark effect IN InAs/GaAs short period strained-layer superlattice MQWs

S. D. Koehler, E. M. Garmire, M. H. Jupina, T. C. Hasenberg, A. R. Kost

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The electrorefraction within and below the band edge of multiple (50) InAs/GaAs short period strained-layer superlattice quantum wells has been measured. An index change of 4 × 10−3 was measured near the excitonic resonance with an applied electric field of 27 kV/cm, corresponding to a quadratic electro-optic coefficient of − 3 × 10−13cm2/V2. These results agree with predictions from the Kramers-Kronig relations based on measurements of electroabsorption.

Original languageEnglish (US)
Pages (from-to)2303-2304
Number of pages2
JournalElectronics Letters
Volume27
Issue number25
DOIs
StatePublished - Nov 21 1991
Externally publishedYes

Keywords

  • Semiconductor devices and material testing
  • Semiconductor materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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