Direct measurement of barrier asymmetry in Al Ox Zr Oy magnetic tunnel junctions using off-axis electron holography

Yu Zi Liu, Weigang Wang, T. Moriyama, John Q. Xiao, Z. Zhang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Off-axis electron holography was used to investigate the barrier profile of the Py Al Ox Zr Oy Py magnetic tunnel junctions with different Zr Oy thicknesses. The tunneling magnetoresistance (TMR) has a strong dependence on bias voltage and the bias voltage for maximum TMR is shifted from zero. This shift increases with Zr Oy barrier thickness due to the increasing barrier asymmetry in the junctions. The evolution of barrier asymmetry was directly observed by the phase change of the off-axis electron holography, which unambiguously shows the barrier profile changes from triangular to trapezoidal shape as increasing of Zr Oy thickness.

Original languageEnglish (US)
Article number134420
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number13
DOIs
StatePublished - Apr 24 2007
Externally publishedYes

Fingerprint

Tunnelling magnetoresistance
Electron holography
Tunnel junctions
Bias voltage
tunnel junctions
holography
asymmetry
electrons
electric potential
profiles
shift

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Direct measurement of barrier asymmetry in Al Ox Zr Oy magnetic tunnel junctions using off-axis electron holography. / Liu, Yu Zi; Wang, Weigang; Moriyama, T.; Xiao, John Q.; Zhang, Z.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 75, No. 13, 134420, 24.04.2007.

Research output: Contribution to journalArticle

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