Direct Observation of Excitonic Rabi Oscillations in Semiconductors

A. Schülzgen, Rudolf Binder, M. E. Donovan, M. Lindberg, K. Wundke, H. M. Gibbs, Galina Khitrova, Nasser N Peyghambarian

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Abstract

We observe multiple excitonic optical Rabi oscillations in a semiconductor quantum well. Up to eight oscillation periods of the heavy-hole exciton density on a subpicosecond time scale are observed. An approximate linear dependence of the oscillation frequency on the light field amplitude is established. The experiment is based on a two-color detection scheme which allows for the observation of the heavy-hole exciton density via transmission changes at the light-hole exciton. The observations are in good agreement with theoretical computations based on multiband semiconductor Bloch equations.

Original languageEnglish (US)
Pages (from-to)2346-2349
Number of pages4
JournalPhysical Review Letters
Volume82
Issue number2-11
Publication statusPublished - Mar 15 1999

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Schülzgen, A., Binder, R., Donovan, M. E., Lindberg, M., Wundke, K., Gibbs, H. M., ... Peyghambarian, N. N. (1999). Direct Observation of Excitonic Rabi Oscillations in Semiconductors. Physical Review Letters, 82(2-11), 2346-2349.