Direct observation of the rotational direction of electron spin precession in semiconductors

M. Oestreich, D. Hägele, H. C. Schneider, A. Knorr, A. Hansch, S. Hallstein, K. H. Schmidt, K. Köhler, S. W. Koch, W. W. Rühle

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.

Original languageEnglish (US)
Pages (from-to)753-758
Number of pages6
JournalSolid State Communications
Volume108
Issue number10
DOIs
StatePublished - Nov 5 1998

    Fingerprint

Keywords

  • A. Semiconductors
  • D. Spin dynamics
  • E. Luminescence
  • E. Time-resolved optical spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Oestreich, M., Hägele, D., Schneider, H. C., Knorr, A., Hansch, A., Hallstein, S., Schmidt, K. H., Köhler, K., Koch, S. W., & Rühle, W. W. (1998). Direct observation of the rotational direction of electron spin precession in semiconductors. Solid State Communications, 108(10), 753-758. https://doi.org/10.1016/S0038-1098(98)00440-2