Direct observation of the rotational direction of electron spin precession in semiconductors

M. Oestreich, D. Hägele, H. C. Schneider, A. Knorr, A. Hansch, S. Hallstein, K. H. Schmidt, K. Köhler, Stephan W Koch, W. W. Rühle

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.

Original languageEnglish (US)
Pages (from-to)753-758
Number of pages6
JournalSolid State Communications
Volume108
Issue number10
StatePublished - Nov 5 1998
Externally publishedYes

Fingerprint

precession
electron spin
Semiconductor materials
Spin dynamics
Electrons
spin dynamics
Semiconductor quantum wells
Photoluminescence
electrons
quantum wells
photoluminescence
estimates
Chemical analysis
Direction compound

Keywords

  • A. Semiconductors
  • D. Spin dynamics
  • E. Luminescence
  • E. Time-resolved optical spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Oestreich, M., Hägele, D., Schneider, H. C., Knorr, A., Hansch, A., Hallstein, S., ... Rühle, W. W. (1998). Direct observation of the rotational direction of electron spin precession in semiconductors. Solid State Communications, 108(10), 753-758.

Direct observation of the rotational direction of electron spin precession in semiconductors. / Oestreich, M.; Hägele, D.; Schneider, H. C.; Knorr, A.; Hansch, A.; Hallstein, S.; Schmidt, K. H.; Köhler, K.; Koch, Stephan W; Rühle, W. W.

In: Solid State Communications, Vol. 108, No. 10, 05.11.1998, p. 753-758.

Research output: Contribution to journalArticle

Oestreich, M, Hägele, D, Schneider, HC, Knorr, A, Hansch, A, Hallstein, S, Schmidt, KH, Köhler, K, Koch, SW & Rühle, WW 1998, 'Direct observation of the rotational direction of electron spin precession in semiconductors', Solid State Communications, vol. 108, no. 10, pp. 753-758.
Oestreich M, Hägele D, Schneider HC, Knorr A, Hansch A, Hallstein S et al. Direct observation of the rotational direction of electron spin precession in semiconductors. Solid State Communications. 1998 Nov 5;108(10):753-758.
Oestreich, M. ; Hägele, D. ; Schneider, H. C. ; Knorr, A. ; Hansch, A. ; Hallstein, S. ; Schmidt, K. H. ; Köhler, K. ; Koch, Stephan W ; Rühle, W. W. / Direct observation of the rotational direction of electron spin precession in semiconductors. In: Solid State Communications. 1998 ; Vol. 108, No. 10. pp. 753-758.
@article{12d52f225eca4d48ac0bd9ba33ded5de,
title = "Direct observation of the rotational direction of electron spin precession in semiconductors",
abstract = "A new experimental method is presented to determine the sign of the electron Land{\'e} g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.",
keywords = "A. Semiconductors, D. Spin dynamics, E. Luminescence, E. Time-resolved optical spectroscopy",
author = "M. Oestreich and D. H{\"a}gele and Schneider, {H. C.} and A. Knorr and A. Hansch and S. Hallstein and Schmidt, {K. H.} and K. K{\"o}hler and Koch, {Stephan W} and R{\"u}hle, {W. W.}",
year = "1998",
month = "11",
day = "5",
language = "English (US)",
volume = "108",
pages = "753--758",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "10",

}

TY - JOUR

T1 - Direct observation of the rotational direction of electron spin precession in semiconductors

AU - Oestreich, M.

AU - Hägele, D.

AU - Schneider, H. C.

AU - Knorr, A.

AU - Hansch, A.

AU - Hallstein, S.

AU - Schmidt, K. H.

AU - Köhler, K.

AU - Koch, Stephan W

AU - Rühle, W. W.

PY - 1998/11/5

Y1 - 1998/11/5

N2 - A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.

AB - A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.

KW - A. Semiconductors

KW - D. Spin dynamics

KW - E. Luminescence

KW - E. Time-resolved optical spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0032487690&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032487690&partnerID=8YFLogxK

M3 - Article

VL - 108

SP - 753

EP - 758

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 10

ER -