Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

N. D. Bassim, M. E. Twigg, M. A. Mastro, C. R. Eddy, Thomas Zega, R. L. Henry, J. C. Culbertson, R. T. Holm, P. Neudeck, J. A. Powell, A. J. Trunek

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Using transmission electron microscopy, we have analyzed dislocations in AlN nucleation layers and GaN films deposited by metalorganic vapor phase epitaxy on the (0 0 0 1) surface of epitaxially grown 4H-SiC mesas with and without steps. For 4H-SiC substrates free of SiC surface steps, half-loop nucleation and glide parallel to the AlN/SiC interfacial plane play the dominant role in strain relief, with no mechanism for generating threading dislocations. In contrast, 4H-SiC mesa surfaces with steps give rise to regions of high stress at the heteroepitaxial interface, thereby providing an environment conducive to the nucleation and growth of threading dislocations, which act to accommodate misfit strain by the tilting of threading edge dislocations. We compare the excess stress associated with strain relief for each mechanism and find that the driving force for plastic flow is much greater for threading dislocation tilt than for half-loop propagation.

Original languageEnglish (US)
Pages (from-to)103-107
Number of pages5
JournalJournal of Crystal Growth
Volume304
Issue number1
DOIs
StatePublished - Jun 1 2007
Externally publishedYes

Fingerprint

mesas
Nitrides
nitrides
Nucleation
nucleation
Edge dislocations
Metallorganic vapor phase epitaxy
Plastic flow
plastic flow
edge dislocations
vapor phase epitaxy
Transmission electron microscopy
Substrates
transmission electron microscopy
propagation

Keywords

  • A1. Interfaces
  • A1. Line defects
  • A1. Nucleation
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Bassim, N. D., Twigg, M. E., Mastro, M. A., Eddy, C. R., Zega, T., Henry, R. L., ... Trunek, A. J. (2007). Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps. Journal of Crystal Growth, 304(1), 103-107. https://doi.org/10.1016/j.jcrysgro.2007.02.007

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps. / Bassim, N. D.; Twigg, M. E.; Mastro, M. A.; Eddy, C. R.; Zega, Thomas; Henry, R. L.; Culbertson, J. C.; Holm, R. T.; Neudeck, P.; Powell, J. A.; Trunek, A. J.

In: Journal of Crystal Growth, Vol. 304, No. 1, 01.06.2007, p. 103-107.

Research output: Contribution to journalArticle

Bassim, ND, Twigg, ME, Mastro, MA, Eddy, CR, Zega, T, Henry, RL, Culbertson, JC, Holm, RT, Neudeck, P, Powell, JA & Trunek, AJ 2007, 'Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps', Journal of Crystal Growth, vol. 304, no. 1, pp. 103-107. https://doi.org/10.1016/j.jcrysgro.2007.02.007
Bassim, N. D. ; Twigg, M. E. ; Mastro, M. A. ; Eddy, C. R. ; Zega, Thomas ; Henry, R. L. ; Culbertson, J. C. ; Holm, R. T. ; Neudeck, P. ; Powell, J. A. ; Trunek, A. J. / Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps. In: Journal of Crystal Growth. 2007 ; Vol. 304, No. 1. pp. 103-107.
@article{cb58cfc6c23342009226c520e97e0d04,
title = "Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps",
abstract = "Using transmission electron microscopy, we have analyzed dislocations in AlN nucleation layers and GaN films deposited by metalorganic vapor phase epitaxy on the (0 0 0 1) surface of epitaxially grown 4H-SiC mesas with and without steps. For 4H-SiC substrates free of SiC surface steps, half-loop nucleation and glide parallel to the AlN/SiC interfacial plane play the dominant role in strain relief, with no mechanism for generating threading dislocations. In contrast, 4H-SiC mesa surfaces with steps give rise to regions of high stress at the heteroepitaxial interface, thereby providing an environment conducive to the nucleation and growth of threading dislocations, which act to accommodate misfit strain by the tilting of threading edge dislocations. We compare the excess stress associated with strain relief for each mechanism and find that the driving force for plastic flow is much greater for threading dislocation tilt than for half-loop propagation.",
keywords = "A1. Interfaces, A1. Line defects, A1. Nucleation, A3. Metalorganic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting gallium compounds",
author = "Bassim, {N. D.} and Twigg, {M. E.} and Mastro, {M. A.} and Eddy, {C. R.} and Thomas Zega and Henry, {R. L.} and Culbertson, {J. C.} and Holm, {R. T.} and P. Neudeck and Powell, {J. A.} and Trunek, {A. J.}",
year = "2007",
month = "6",
day = "1",
doi = "10.1016/j.jcrysgro.2007.02.007",
language = "English (US)",
volume = "304",
pages = "103--107",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

AU - Bassim, N. D.

AU - Twigg, M. E.

AU - Mastro, M. A.

AU - Eddy, C. R.

AU - Zega, Thomas

AU - Henry, R. L.

AU - Culbertson, J. C.

AU - Holm, R. T.

AU - Neudeck, P.

AU - Powell, J. A.

AU - Trunek, A. J.

PY - 2007/6/1

Y1 - 2007/6/1

N2 - Using transmission electron microscopy, we have analyzed dislocations in AlN nucleation layers and GaN films deposited by metalorganic vapor phase epitaxy on the (0 0 0 1) surface of epitaxially grown 4H-SiC mesas with and without steps. For 4H-SiC substrates free of SiC surface steps, half-loop nucleation and glide parallel to the AlN/SiC interfacial plane play the dominant role in strain relief, with no mechanism for generating threading dislocations. In contrast, 4H-SiC mesa surfaces with steps give rise to regions of high stress at the heteroepitaxial interface, thereby providing an environment conducive to the nucleation and growth of threading dislocations, which act to accommodate misfit strain by the tilting of threading edge dislocations. We compare the excess stress associated with strain relief for each mechanism and find that the driving force for plastic flow is much greater for threading dislocation tilt than for half-loop propagation.

AB - Using transmission electron microscopy, we have analyzed dislocations in AlN nucleation layers and GaN films deposited by metalorganic vapor phase epitaxy on the (0 0 0 1) surface of epitaxially grown 4H-SiC mesas with and without steps. For 4H-SiC substrates free of SiC surface steps, half-loop nucleation and glide parallel to the AlN/SiC interfacial plane play the dominant role in strain relief, with no mechanism for generating threading dislocations. In contrast, 4H-SiC mesa surfaces with steps give rise to regions of high stress at the heteroepitaxial interface, thereby providing an environment conducive to the nucleation and growth of threading dislocations, which act to accommodate misfit strain by the tilting of threading edge dislocations. We compare the excess stress associated with strain relief for each mechanism and find that the driving force for plastic flow is much greater for threading dislocation tilt than for half-loop propagation.

KW - A1. Interfaces

KW - A1. Line defects

KW - A1. Nucleation

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting gallium compounds

UR - http://www.scopus.com/inward/record.url?scp=34247564608&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247564608&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2007.02.007

DO - 10.1016/j.jcrysgro.2007.02.007

M3 - Article

VL - 304

SP - 103

EP - 107

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -