Disorder-averaged excitonic response and its application to normal-mode coupling in semiconductor microcavities within a linear dispersion theory

C. Ell, J. Prineas, T. R. Nelson, S. Park, H. M. Gibbs, Galina Khitrova, Stephan W Koch, R. Houdre

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The problem of disorder in a quantum well (QW) system is isolated from a full treatment of QW structural disorder interplay by carefully measuring the disorder-averaged optical susceptibility of a multiple quantum well (MQW). The MQW is then used in a transfer matrix calculation for light propagation in a normal mode coupling (NMC) structure. The measured susceptibility is used to calculate the response of the microcavity structures in reflectivity. A further demonstration of the validity of the approach is presented using the extracted absorption coefficient to calculate the reflectivity linewidths for the microcavity structure.

Original languageEnglish (US)
Title of host publicationTechnical Digest - European Quantum Electronics Conference
Editors Anon
PublisherIEEE
Pages54
Number of pages1
StatePublished - 1998
EventProceedings of the 1998 International Quantum Electronics Conference - San Francisco, CA, USA
Duration: May 3 1998May 8 1998

Other

OtherProceedings of the 1998 International Quantum Electronics Conference
CitySan Francisco, CA, USA
Period5/3/985/8/98

Fingerprint

coupled modes
quantum wells
disorders
magnetic permeability
reflectance
absorptivity
propagation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ell, C., Prineas, J., Nelson, T. R., Park, S., Gibbs, H. M., Khitrova, G., ... Houdre, R. (1998). Disorder-averaged excitonic response and its application to normal-mode coupling in semiconductor microcavities within a linear dispersion theory. In Anon (Ed.), Technical Digest - European Quantum Electronics Conference (pp. 54). IEEE.

Disorder-averaged excitonic response and its application to normal-mode coupling in semiconductor microcavities within a linear dispersion theory. / Ell, C.; Prineas, J.; Nelson, T. R.; Park, S.; Gibbs, H. M.; Khitrova, Galina; Koch, Stephan W; Houdre, R.

Technical Digest - European Quantum Electronics Conference. ed. / Anon. IEEE, 1998. p. 54.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ell, C, Prineas, J, Nelson, TR, Park, S, Gibbs, HM, Khitrova, G, Koch, SW & Houdre, R 1998, Disorder-averaged excitonic response and its application to normal-mode coupling in semiconductor microcavities within a linear dispersion theory. in Anon (ed.), Technical Digest - European Quantum Electronics Conference. IEEE, pp. 54, Proceedings of the 1998 International Quantum Electronics Conference, San Francisco, CA, USA, 5/3/98.
Ell C, Prineas J, Nelson TR, Park S, Gibbs HM, Khitrova G et al. Disorder-averaged excitonic response and its application to normal-mode coupling in semiconductor microcavities within a linear dispersion theory. In Anon, editor, Technical Digest - European Quantum Electronics Conference. IEEE. 1998. p. 54
Ell, C. ; Prineas, J. ; Nelson, T. R. ; Park, S. ; Gibbs, H. M. ; Khitrova, Galina ; Koch, Stephan W ; Houdre, R. / Disorder-averaged excitonic response and its application to normal-mode coupling in semiconductor microcavities within a linear dispersion theory. Technical Digest - European Quantum Electronics Conference. editor / Anon. IEEE, 1998. pp. 54
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