Disorder-induced dephasing in semiconductors

S. Weiser, T. Meier, J. Möbius, A. Euteneuer, E. Mayer, W. Stolz, M. Hofmann, W. Rühle, P. Thomas, S. Koch

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


Microscopic calculations including energetic disorder and Coulomb correlations up to third order in the laser field are performed. The resulting four-wave-mixing signals show polarization-dependent dephasing induced by diagonal disorder. The correct modeling of this disorder-induced dephasing requires the proper inclusion of Coulomb correlations. The theoretical results are in good qualitative agreement with measurements performed on a variety of quantum-well samples.

Original languageEnglish (US)
Pages (from-to)13088-13098
Number of pages11
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number19
StatePublished - 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Disorder-induced dephasing in semiconductors'. Together they form a unique fingerprint.

Cite this