Disorder-induced dephasing in semiconductors

S. Weiser; T. Meier; J. Möbius; A. Euteneuer; E. Mayer; W. Stolz; M. Hofmann; W. Rühle; P. Thomas; S. Koch

doi:10.1103/PhysRevB.61.13088

Disorder-induced dephasing in semiconductors

S. Weiser, T. Meier, J. Möbius, A. Euteneuer, E. Mayer, W. Stolz, M. Hofmann, W. Rühle, P. Thomas, S. Koch

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

Microscopic calculations including energetic disorder and Coulomb correlations up to third order in the laser field are performed. The resulting four-wave-mixing signals show polarization-dependent dephasing induced by diagonal disorder. The correct modeling of this disorder-induced dephasing requires the proper inclusion of Coulomb correlations. The theoretical results are in good qualitative agreement with measurements performed on a variety of quantum-well samples.

Original language	English (US)
Pages (from-to)	13088-13098
Number of pages	11
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	61
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.61.13088
State	Published - Jan 1 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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AU - Meier, T.

AU - Möbius, J.

AU - Euteneuer, A.

AU - Mayer, E.

AU - Stolz, W.

AU - Hofmann, M.

AU - Rühle, W.

AU - Thomas, P.

AU - Koch, S.

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