Disorder-induced dephasing of excitons in semiconductor heterostructures

D. Brinkmann, K. Bott, S. W. Koch, P. Thomas

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A theoretical study of the influence of static disorder on the dephasing of the optical polarization in semiconductor heterostructures is presented. Coulomb interaction effects between the excited carriers are treated at the Hartree-Fock level. For the example of degenerate-four-wave-mixing configuration the parameter range is analyzed for which one can expect disorder induced dephasing.

Original languageEnglish (US)
Pages (from-to)493-499
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Volume206
Issue number1
DOIs
StatePublished - Mar 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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