A theoretical study of the influence of static disorder on the dephasing of the optical polarization in semiconductor heterostructures is presented. Coulomb interaction effects between the excited carriers are treated at the Hartree-Fock level. For the example of degenerate-four-wave-mixing configuration the parameter range is analyzed for which one can expect disorder induced dephasing.
|Original language||English (US)|
|Number of pages||7|
|Journal||Physica Status Solidi (B) Basic Research|
|State||Published - Mar 1998|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics