Dispersion number studies in CMP of interlayer dielectric films

Ara Philipossian, Erin Mitchell

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Determining the factors that cause flow nonidealities during chemical mechanical planarization (CMP) is critical for controlling and optimizing the process. This study explores aspects of the fluid dynamics of CMP on interlayer dielectric films. The residence time distribution of slurry under the wafer was experimentally determined and used to calculate the dispersion number of the fluid in the wafer-pad region based on a dispersion model for nonideal reactors. Furthermore, lubrication theory was employed to explain trends in flow behavior as operating conditions were varied. The results indicate that at low wafer pressure and high relative pad-wafer velocity, the slurry flow exhibits nearly ideal plug flow behavior. As pressure increases and velocity decreases, flow begins to deviate from ideal behavior and the slurry becomes increasingly more mixed beneath the wafer. These phenomena were found to be the result of variable slurry film thickness between the pad and the wafer, as measured by changes in the coefficient of friction between the pad and the wafer.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume150
Issue number12
DOIs
StatePublished - Dec 2003

Fingerprint

Chemical mechanical polishing
Dielectric films
interlayers
wafers
Residence time distribution
Fluid dynamics
Flow velocity
Lubrication
Film thickness
Friction
Fluids
fluid dynamics
lubrication
plugs
coefficient of friction
film thickness
reactors
trends
causes
fluids

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Dispersion number studies in CMP of interlayer dielectric films. / Philipossian, Ara; Mitchell, Erin.

In: Journal of the Electrochemical Society, Vol. 150, No. 12, 12.2003.

Research output: Contribution to journalArticle

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