Dissolution and electrochemical impedance spectroscopy studies of thin copper oxide films on copper in semi-aqueous fluoride solutions

N. Venkataraman, Srini Raghavan

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The selective dissolution of thin copper oxide films grown on copper in semi-aqueous formulations containing dimethyl sulfoxide (DMSO), ammonium fluoride (NH4F) and water was studied. Optimization of the formulations was carried out by systematic evaluation of the effect of solvent content and pH on the removal rates of copper oxide films and selectivity towards copper and carbon doped oxide (CDO) low k dielectric film. Copper oxide removal rate of ∼180 /min with a selectivity of ∼130:1 towards copper and ∼20:1 selectivity towards CDO was obtained in a formulation containing 29% DMSO, 1% NH4F and 70% H2O at pH 4. Electrochemical impedance spectroscopy studies were performed on this system and the data were analyzed to characterize the copper oxide/electrolyte interface with the ultimate objective of developing an end point detection technique for copper oxide removal.

Original languageEnglish (US)
Pages (from-to)1689-1695
Number of pages7
JournalMicroelectronic Engineering
Volume87
Issue number9
DOIs
StatePublished - Nov 2010

Fingerprint

Copper oxides
copper oxides
Electrochemical impedance spectroscopy
Fluorides
Oxide films
fluorides
oxide films
Copper
dissolving
Dissolution
impedance
copper
Dimethyl sulfoxide
spectroscopy
selectivity
Dimethyl Sulfoxide
formulations
Oxides
Carbon
Dielectric films

Keywords

  • BEOL cleaning
  • Copper oxide removal
  • Electrochemical impedance spectroscopy
  • SAF chemical system

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

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abstract = "The selective dissolution of thin copper oxide films grown on copper in semi-aqueous formulations containing dimethyl sulfoxide (DMSO), ammonium fluoride (NH4F) and water was studied. Optimization of the formulations was carried out by systematic evaluation of the effect of solvent content and pH on the removal rates of copper oxide films and selectivity towards copper and carbon doped oxide (CDO) low k dielectric film. Copper oxide removal rate of ∼180 /min with a selectivity of ∼130:1 towards copper and ∼20:1 selectivity towards CDO was obtained in a formulation containing 29{\%} DMSO, 1{\%} NH4F and 70{\%} H2O at pH 4. Electrochemical impedance spectroscopy studies were performed on this system and the data were analyzed to characterize the copper oxide/electrolyte interface with the ultimate objective of developing an end point detection technique for copper oxide removal.",
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AU - Raghavan, Srini

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N2 - The selective dissolution of thin copper oxide films grown on copper in semi-aqueous formulations containing dimethyl sulfoxide (DMSO), ammonium fluoride (NH4F) and water was studied. Optimization of the formulations was carried out by systematic evaluation of the effect of solvent content and pH on the removal rates of copper oxide films and selectivity towards copper and carbon doped oxide (CDO) low k dielectric film. Copper oxide removal rate of ∼180 /min with a selectivity of ∼130:1 towards copper and ∼20:1 selectivity towards CDO was obtained in a formulation containing 29% DMSO, 1% NH4F and 70% H2O at pH 4. Electrochemical impedance spectroscopy studies were performed on this system and the data were analyzed to characterize the copper oxide/electrolyte interface with the ultimate objective of developing an end point detection technique for copper oxide removal.

AB - The selective dissolution of thin copper oxide films grown on copper in semi-aqueous formulations containing dimethyl sulfoxide (DMSO), ammonium fluoride (NH4F) and water was studied. Optimization of the formulations was carried out by systematic evaluation of the effect of solvent content and pH on the removal rates of copper oxide films and selectivity towards copper and carbon doped oxide (CDO) low k dielectric film. Copper oxide removal rate of ∼180 /min with a selectivity of ∼130:1 towards copper and ∼20:1 selectivity towards CDO was obtained in a formulation containing 29% DMSO, 1% NH4F and 70% H2O at pH 4. Electrochemical impedance spectroscopy studies were performed on this system and the data were analyzed to characterize the copper oxide/electrolyte interface with the ultimate objective of developing an end point detection technique for copper oxide removal.

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