Distribution of exciton binding-energies in disordered semiconductor quantum-wells

A. Futeneuer, E. Finger, M. Hofmann, W. Stolz, T. Meier, P. Thomas, Stephan W Koch, W. W. Ruehle

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Selective coherent spectroscopy (SCS) was used to study the distribution of exciton binding energies in symmetrically strained (GaIn)As/Ga(PAs) multiple quantum wells. The SCS spectra for three different detection energies with the linear excitonic absorption. The linear absorption always and average over the excitonic binding energy. In contrast, the SCS spectra shows an increase of the exciton binding energy with increasing exciton localization.

Original languageEnglish (US)
Title of host publicationIQEC, International Quantum Electronics Conference Proceedings
PublisherIEEE
Pages204
Number of pages1
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA
Duration: May 23 1999May 28 1999

Other

OtherProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99)
CityBaltimore, MD, USA
Period5/23/995/28/99

Fingerprint

binding energy
excitons
quantum wells
spectroscopy
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Futeneuer, A., Finger, E., Hofmann, M., Stolz, W., Meier, T., Thomas, P., ... Ruehle, W. W. (1999). Distribution of exciton binding-energies in disordered semiconductor quantum-wells. In IQEC, International Quantum Electronics Conference Proceedings (pp. 204). IEEE.

Distribution of exciton binding-energies in disordered semiconductor quantum-wells. / Futeneuer, A.; Finger, E.; Hofmann, M.; Stolz, W.; Meier, T.; Thomas, P.; Koch, Stephan W; Ruehle, W. W.

IQEC, International Quantum Electronics Conference Proceedings. IEEE, 1999. p. 204.

Research output: Chapter in Book/Report/Conference proceedingChapter

Futeneuer, A, Finger, E, Hofmann, M, Stolz, W, Meier, T, Thomas, P, Koch, SW & Ruehle, WW 1999, Distribution of exciton binding-energies in disordered semiconductor quantum-wells. in IQEC, International Quantum Electronics Conference Proceedings. IEEE, pp. 204, Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99), Baltimore, MD, USA, 5/23/99.
Futeneuer A, Finger E, Hofmann M, Stolz W, Meier T, Thomas P et al. Distribution of exciton binding-energies in disordered semiconductor quantum-wells. In IQEC, International Quantum Electronics Conference Proceedings. IEEE. 1999. p. 204
Futeneuer, A. ; Finger, E. ; Hofmann, M. ; Stolz, W. ; Meier, T. ; Thomas, P. ; Koch, Stephan W ; Ruehle, W. W. / Distribution of exciton binding-energies in disordered semiconductor quantum-wells. IQEC, International Quantum Electronics Conference Proceedings. IEEE, 1999. pp. 204
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