Distribution of exciton binding-energies in disordered semiconductor quantum-wells

A. Futeneuer, E. Finger, M. Hofmann, W. Stolz, T. Meier, P. Thomas, S. W. Koch, W. W. Ruehle

Research output: Contribution to conferencePaper

Abstract

Selective coherent spectroscopy (SCS) was used to study the distribution of exciton binding energies in symmetrically strained (GaIn)As/Ga(PAs) multiple quantum wells. The SCS spectra for three different detection energies with the linear excitonic absorption. The linear absorption always and average over the excitonic binding energy. In contrast, the SCS spectra shows an increase of the exciton binding energy with increasing exciton localization.

Original languageEnglish (US)
Number of pages1
StatePublished - Jan 1 1999
EventProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA
Duration: May 23 1999May 28 1999

Other

OtherProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99)
CityBaltimore, MD, USA
Period5/23/995/28/99

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Futeneuer, A., Finger, E., Hofmann, M., Stolz, W., Meier, T., Thomas, P., Koch, S. W., & Ruehle, W. W. (1999). Distribution of exciton binding-energies in disordered semiconductor quantum-wells. Paper presented at Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99), Baltimore, MD, USA, .