Doppler-shifted self-reflection from a semiconductor

A. Schülzgen, Nasser N Peyghambarian, S. Hughes

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report the experimental observation of a self-reflected wave inside a dense saturable absorber. A femtosecond pulse saturates the absorption and causes a density front to penetrate into the semiconductor. The dielectric constant change across the boundary between areas of low and high densities results in internal reflection. Due to the front propagation the self-reflected light is shifted by the Doppler effect. The Doppler shift makes it possible to distinguish between surface reflection and self-reflection and is used to experimentally verify the dynamic nonlinear skin effect. The measurements are in agreement with our theory which is within the framework of the reduced semiconductor Maxwell-Bloch equations.

Original languageEnglish (US)
Pages (from-to)125-130
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume206
Issue number1
StatePublished - Mar 1998

Fingerprint

Doppler effect
Semiconductor materials
Saturable absorbers
Skin effect
reflected waves
Maxwell equations
Ultrashort pulses
Wave propagation
absorbers
Permittivity
permittivity
propagation
causes
shift
pulses

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Doppler-shifted self-reflection from a semiconductor. / Schülzgen, A.; Peyghambarian, Nasser N; Hughes, S.

In: Physica Status Solidi (B) Basic Research, Vol. 206, No. 1, 03.1998, p. 125-130.

Research output: Contribution to journalArticle

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