Abstract
We investigate theoretically the master oscillator power amplifier using a semiconductor laser model that is fully time and space (laterally and longitudinally) resolved. We numerically examine the stability of the device and identify the nature of the different instabilities. These can arise from undamped relaxation oscillations, beating between the longitudinal modes of any of the cavities that comprise the device, or lateral filamentation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 166-170 |
| Number of pages | 5 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 34 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1998 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Dynamic instabilities in master oscillator power amplifier semiconductor lasers. / Egan, A.; Ning, C. Z.; Moloney, Jerome V; Indik, Robert A; Wright, M. W.; Bessert, D. J.; McInerney, J. G.
In: IEEE Journal of Quantum Electronics, Vol. 34, No. 1, 01.1998, p. 166-170.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Dynamic instabilities in master oscillator power amplifier semiconductor lasers
AU - Egan, A.
AU - Ning, C. Z.
AU - Moloney, Jerome V
AU - Indik, Robert A
AU - Wright, M. W.
AU - Bessert, D. J.
AU - McInerney, J. G.
PY - 1998/1
Y1 - 1998/1
N2 - We investigate theoretically the master oscillator power amplifier using a semiconductor laser model that is fully time and space (laterally and longitudinally) resolved. We numerically examine the stability of the device and identify the nature of the different instabilities. These can arise from undamped relaxation oscillations, beating between the longitudinal modes of any of the cavities that comprise the device, or lateral filamentation.
AB - We investigate theoretically the master oscillator power amplifier using a semiconductor laser model that is fully time and space (laterally and longitudinally) resolved. We numerically examine the stability of the device and identify the nature of the different instabilities. These can arise from undamped relaxation oscillations, beating between the longitudinal modes of any of the cavities that comprise the device, or lateral filamentation.
UR - http://www.scopus.com/inward/record.url?scp=0031647678&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031647678&partnerID=8YFLogxK
U2 - 10.1109/3.655020
DO - 10.1109/3.655020
M3 - Article
AN - SCOPUS:0031647678
VL - 34
SP - 166
EP - 170
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 1
ER -