Dynamic Stark effect in semiconductors. High-speed modulation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Laser excitation above the bandgap of semiconductor materials like GaAs creates a high density of electrons and holes. These quasi particles form a quantum mechanical system in which optical nonlinearities arise as a result of many-body effects such as screening of the Coulomb potential, reduction of the bandgap, and filling of the band and of the states. The refractive index change resulting from such processes may be employed to demonstrate a variety of devices such as nonlinear switches, modulators, and logic gates. These optical nonlinearities may be measured using various techniques such as four-wave mixing, interferometry, and modulation spectroscopy. In the latter technique, an analogy is established to the electroreflectance effect, in which the optical properties of a semiconductor are modulated by the application of a low-frequency electric field. In the experiment reported, the modulating element is the E-field of the pump beam. At a much higher frequency than in electroreflectance spectroscopy, the pump beam thus produces field-induced reflectance and transmittance changes from which the refractive index change is obtained. Optical Stark effect may be observed in semiconductors as the blue shift of the exciton resonance. At higher pump intensities and smaller pump detunings from the exciton, the real carrier generation, either by one- or two-photon absorption, also affects the observed spectra.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsFred H. Pollak, Manuel Cardona, David E. Aspnes
PublisherPubl by Int Soc for Optical Engineering
Pages376-380
Number of pages5
Volume1286
ISBN (Print)0819403377
StatePublished - 1990
EventInternational Conference on Modulation Spectroscopy - San Diego, CA, USA
Duration: Mar 19 1990Mar 21 1990

Other

OtherInternational Conference on Modulation Spectroscopy
CitySan Diego, CA, USA
Period3/19/903/21/90

Fingerprint

Stark effect
high speed
Modulation
Pumps
pumps
Semiconductor materials
modulation
Excitons
Refractive index
Energy gap
Photons
nonlinearity
excitons
Spectroscopy
refractivity
Laser excitation
Logic gates
Four wave mixing
photons
Coulomb potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Peyghambarian, N. N., Koch, S. W., & Seraphin, B. O. (1990). Dynamic Stark effect in semiconductors. High-speed modulation. In F. H. Pollak, M. Cardona, & D. E. Aspnes (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1286, pp. 376-380). Publ by Int Soc for Optical Engineering.

Dynamic Stark effect in semiconductors. High-speed modulation. / Peyghambarian, Nasser N; Koch, Stephan W; Seraphin, B. O.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Fred H. Pollak; Manuel Cardona; David E. Aspnes. Vol. 1286 Publ by Int Soc for Optical Engineering, 1990. p. 376-380.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Peyghambarian, NN, Koch, SW & Seraphin, BO 1990, Dynamic Stark effect in semiconductors. High-speed modulation. in FH Pollak, M Cardona & DE Aspnes (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1286, Publ by Int Soc for Optical Engineering, pp. 376-380, International Conference on Modulation Spectroscopy, San Diego, CA, USA, 3/19/90.
Peyghambarian NN, Koch SW, Seraphin BO. Dynamic Stark effect in semiconductors. High-speed modulation. In Pollak FH, Cardona M, Aspnes DE, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1286. Publ by Int Soc for Optical Engineering. 1990. p. 376-380
Peyghambarian, Nasser N ; Koch, Stephan W ; Seraphin, B. O. / Dynamic Stark effect in semiconductors. High-speed modulation. Proceedings of SPIE - The International Society for Optical Engineering. editor / Fred H. Pollak ; Manuel Cardona ; David E. Aspnes. Vol. 1286 Publ by Int Soc for Optical Engineering, 1990. pp. 376-380
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