Edge channels and the role of contacts in the quantum Hall regime

G. M̈ller, D. Weiss, S. Koch, K. Von Klitzing, H. Nickel, W. Schlapp, R. Lösch

Research output: Contribution to journalArticle

72 Scopus citations

Abstract

The vanishing voltage drop Uxx in the quantum Hall regime is destroyed if barriers with reduced filling factors are introduced between the potential probes. We investigated a system with two barriers created by Schottky gates that are separated by up to 200 m. Two metallic contacts could be electrically connected or disconnected to the system in the region between the barriers. The change from adiabatic to equilibrated transport demonstrates the importance of Ohmic contacts as energy and phase-randomizing reservoirs. The experiments show strong evidence for current-carrying edge states.

Original languageEnglish (US)
Pages (from-to)7633-7636
Number of pages4
JournalPhysical Review B
Volume42
Issue number12
DOIs
StatePublished - Jan 1 1990

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Edge channels and the role of contacts in the quantum Hall regime'. Together they form a unique fingerprint.

  • Cite this

    M̈ller, G., Weiss, D., Koch, S., Von Klitzing, K., Nickel, H., Schlapp, W., & Lösch, R. (1990). Edge channels and the role of contacts in the quantum Hall regime. Physical Review B, 42(12), 7633-7636. https://doi.org/10.1103/PhysRevB.42.7633